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  • 封装:TO-236-3,SC-59,SOT-23-3
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:带卷 (TR)
  • 参考价格:$0.02457-$0.04347

更新日期:2025-01-08

产品简介:MOSFET N-CH 50V 220MA SOT-23

  • 封装:TO-236-3,SC-59,SOT-23-3
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:带卷 (TR)
  • 参考价格:$0.02457-$0.04347

BSS138 供应商

  • 公司
  • 型号
  • 品牌
  • 封装/批号
  • 数量
  • 地区
  • 日期
  • 说明
  • 询价

BSS138 中文资料属性参数

  • 产品培训模块:High Voltage Switches for Power ProcessingSMPS Power Switch
  • 标准包装:3,000
  • 类别:分离式半导体产品
  • 家庭:FET - 单
  • 系列:-
  • FET 型:MOSFET N 通道,金属氧化物
  • FET 特点:逻辑电平门
  • 漏极至源极电压(Vdss):50V
  • 电流 - 连续漏极(Id) @ 25° C:220mA
  • 开态Rds(最大)@ Id, Vgs @ 25° C:3.5 欧姆 @ 220mA,10V
  • Id 时的 Vgs(th)(最大):1.5V @ 1mA
  • 闸电荷(Qg) @ Vgs:2.4nC @ 10V
  • 输入电容 (Ciss) @ Vds:27pF @ 25V
  • 功率 - 最大:360mW
  • 安装类型:表面贴装
  • 封装/外壳:TO-236-3,SC-59,SOT-23-3
  • 供应商设备封装:SOT-23
  • 包装:带卷 (TR)
  • 其它名称:BSS138TR

BSS138 数据手册

数据手册 说明 数量 操作
BSS138

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

5 Pages页,482K 查看
BSS138

N-Channel Enhancement Mode Field Effect Transistor

5 Pages页,482K 查看
BSS138

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

3 Pages页,482K 查看
BSS138

N-Channel Logic Level Enhancement Mode Field Effect Transistor

5 Pages页,482K 查看
BSS138

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

8 Pages页,482K 查看
BSS138DW-7-F

MOSFET, NN CH, 50V, SOT-363; Module Configuration:Dual; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:200mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Current Id Max:200mA; Package / Case:SOT-363; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:50V; Voltage Vgs Rds on Measurement:10V

4页,198K 查看
BSS138LT1G

Power MOSFET 200 mA, 50 V

6 Pages页,80K 查看
BSS138LT3

Power MOSFET 200 mA, 50 V

6 Pages页,80K 查看
BSS138LT3G

Power MOSFET 200 mA, 50 V

6 Pages页,80K 查看
BSS138TA

MOSFET, N, 50V, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:200mA; Package / Case:SOT-23; Pin Configuration:1(G), 2(S),3(D); Power Dissipation Pd:360mW; Pulse Current Idm:800mA; Termination Type:SMD; Transistor Type:; Voltage Vds Typ:50V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V...

3页,59K 查看

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