AOD4186

(V GS = 10V) (V GS = 10V) (V GS = 4.5V) Symbol V DS V GS I DM I AR E AR T J , T STG Symbol Typ Max 16.7 25 40 50 R θJC 2.5 3 I D = 35A R DS(ON) < 15m? T C =25°C 2.5 25 T C =100°C 24 70 Pulsed Drain Current C Continuous Drain Current G Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Units Maximum Junction-to-Ambient A t ≤ 10s °C/W Parameter R θJA V V ±20 Gate-Source Voltage Drain-Source Voltage 40 AOD4186 Maximum Units Parameter Absolute Maximum Ratings T A =25°C unless otherwise noted The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for low voltage inverter applications. R DS(ON) < 19m? V DS (V) =40V Repetitive avalanche energy L=0.1mH C mJ Avalanche Current C 8 Continuous Drain Current 29 10 A A T A =25°C I DSM A T A =70°C I D 35 27 T C =25°C T C =100°C Power Dissipation B P D W Power Dissipation A P DSM W T A =70°C 50 1.6 T A =25°C Maximum J

General Description Features (V GS = 10V) (V GS = 10V) (V GS = 4.5V) - RoHS Compliant 100% UIS Tested! - Halogen Free 100% R g Tested! Symbol V DS V GS I DM I AR E AR T J , T STG Symbol Typ Max 16.7 25 40 50 R θJC 2.5 3 I D = 50A R DS(ON) < 15m? T C =25°C 2.5 25 T C =100°C 24 70 Pulsed Drain Current C Continuous Drain Current G Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Units Maximum Junction-to-Ambient A t ≤ 10s °C/W Parameter R θJA V V ±20 Gate-Source Voltage Drain-Source Voltage 40 AOD4186 N-Channel Enhancement Mode Field Effect Transistor Maximum Units Parameter Absolute Maximum Ratings T A =25°C unless otherwise noted The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for low voltage inverter applications. R DS(ON) < 19m? V DS (V) =40V Repetitive avalanche energy L=0.1mH C mJ Avalanche Current C 8 Continuous Drain Current 29 10 A A T

General Description Features (V GS = 10V) (V GS = 10V) (V GS = 4.5V) - RoHS Compliant 100% UIS Tested! - Halogen Free 100% R g Tested! Symbol V DS V GS I DM I AR E AR T J , T STG Symbol Typ Max 16.7 25 40 50 R θJC 2.5 3 I D = 50A R DS(ON) < 15m? T C =25°C 2.5 25 T C =100°C 24 70 Pulsed Drain Current C Continuous Drain Current G Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Units Maximum Junction-to-Ambient A t ≤ 10s °C/W Parameter R θJA V V ±20 Gate-Source Voltage Drain-Source Voltage 40 AOD4186 N-Channel Enhancement Mode Field Effect Transistor Maximum Units Parameter Absolute Maximum Ratings T A =25°C unless otherwise noted The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for low voltage inverter applications. R DS(ON) < 19m? V DS (V) =40V Repetitive avalanche energy L=0.1mH C mJ Avalanche Current C 8 Continuous Drain Current 29 10 A A T

(V GS = 10V) (V GS = 10V) (V GS = 4.5V) Symbol V DS V GS I DM I AR E AR T J , T STG Symbol Typ Max 16.7 25 40 50 R θJC 2.5 3 I D = 35A R DS(ON) < 15m? T C =25°C 2.5 25 T C =100°C 24 70 Pulsed Drain Current C Continuous Drain Current G Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Units Maximum Junction-to-Ambient A t ≤ 10s °C/W Parameter R θJA V V ±20 Gate-Source Voltage Drain-Source Voltage 40 AOD4186 Maximum Units Parameter Absolute Maximum Ratings T A =25°C unless otherwise noted The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for low voltage inverter applications. R DS(ON) < 19m? V DS (V) =40V Repetitive avalanche energy L=0.1mH C mJ Avalanche Current C 8 Continuous Drain Current 29 10 A A T A =25°C I DSM A T A =70°C I D 35 27 T C =25°C T C =100°C Power Dissipation B P D W Power Dissipation A P DSM W T A =70°C 50 1.6 T A =25°C Maximum J