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更新日期:2024-04-01

产品简介:具有可编程死区时间且采用 DWK 封装的汽车类 3.75kVrms、4A/6A 双通道隔离式栅极驱动器

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UCC21320QDWKRQ1 供应商

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UCC21320QDWKRQ1 中文资料属性参数

  • 现有数量:0现货查看交期
  • 价格:1 : ¥41.74000剪切带(CT)2,000 : ¥23.63506卷带(TR)
  • 系列:Automotive, AEC-Q100
  • 包装:卷带(TR)剪切带(CT)? 得捷定制卷带
  • 产品状态:在售
  • 技术:容性耦合
  • 通道数:2
  • 电压 - 隔离:3750Vrms
  • 共模瞬变抗扰度(最小值):100V/ns
  • 传播延迟 tpLH / tpHL(最大值):30ns,30ns
  • 脉宽失真(最大):6ns
  • 上升/下降时间(典型值):6ns,7ns
  • 电流 - 输出高、低:4A,6A
  • 电流 - 峰值输出:4A,6A
  • 电压 - 正向 (Vf)(典型值):-
  • 电流 - DC 正向 (If)(最大值):-
  • 电压 -?输出供电:9.2V ~ 25V
  • 工作温度:-40°C ~ 125°C
  • 安装类型:表面贴装型
  • 封装/外壳:14-SOIC(0.295",7.50mm 宽)
  • 供应商器件封装:14-SOIC
  • 认证机构:CQC,UL,VDE

产品特性

  • 4-A peak source, 6-A peak sink output
  • 3-V to 18-V input VCCI range to interface with both digital and analog controllers
  • Up to 25-V VDD output drive supply
  • Switching parameters: 19-ns typical propagation delay 10-ns minimum pulse width 5-ns maximum delay matching 6-ns maximum pulse-width distortion
  • 19-ns typical propagation delay
  • 10-ns minimum pulse width
  • 5-ns maximum delay matching
  • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100 V/ns
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Programmable overlap and dead time
  • Wide Body SOIC-14 (DWK) Package 3.3mm spacing between driver channels
  • 3.3mm spacing between driver channels
  • Operating temperature range –40 to +125°C
  • Surge immunity up to 12.8 kV
  • Isolation barrier life >40 years
  • TTL and CMOS compatible inputs
  • Rejects input pulses and noise transients shorter than 5 ns
  • Fast disable for power sequencing
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results Device temperature grade 1 Device HBM ESD classification level H2 Device CDM ESD classification level C6
  • Device temperature grade 1
  • Device HBM ESD classification level H2
  • Device CDM ESD classification level C6

产品概述

The UCC21320-Q1 is an isolated dual-channel gate drivers with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion. The input side is isolated from the two output drivers by a 3.75-kVRMS basic isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC.Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.Each device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection. With all these advanced features, the UCC21320-Q1 enables high efficiency, high power density, and robustness.

UCC21320QDWKRQ1 电路图

UCC21320QDWKRQ1 电路图

UCC21320QDWKRQ1 电路图

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