- 封装:24-TSSOP(0.173",4.40mm 宽)
- RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
- 包装方式:管件
- 参考价格:$4.305
更新日期:2024-04-01 00:04:00
产品简介:GTLP 到 LVTTL 1 至 6 驱动器
查看详情- 封装:24-TSSOP(0.173",4.40mm 宽)
- RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
- 包装方式:管件
- 参考价格:$4.305
SN74GTLP817PW 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
SN74GTLP817PW 中文资料属性参数
- 标准包装:60
- 类别:集成电路 (IC)
- 家庭:逻辑 - 变换器
- 系列:74GTLP
- 逻辑功能:变换器,双向
- 位数:6
- 输入类型:GTLP
- 输出类型:LVTTL
- 数据速率:-
- 通道数:1
- 输出/通道数目:6
- 差分 - 输入:输出:无/无
- 传输延迟(最大):4.2ns
- 电源电压:3.15 V ~ 3.45 V
- 工作温度:-40°C ~ 85°C
- 封装/外壳:24-TSSOP(0.173",4.40mm 宽)
- 供应商设备封装:24-TSSOP
- 包装:管件
产品特性
- OEC Circuitry Improves Signal Integrity and Reduces Electromagnetic Interference
- Bidirectional Interface Between GTLP Signal Levels and LVTTL Logic Levels
- GTLP-to-LVTTL 1-to-6 Fanout Driver
- LVTTL-to-GTLP 1-to-2 Fanout Driver
- LVTTL Interfaces Are 5-V Tolerant
- Medium-Drive GTLP Outputs (50 mA)
- Reduced-Drive LVTTL Outputs (\x9612 mA/12 mA)
- Variable Edge-Rate Control (ERC) Input Selects GTLP Rise and Fall Times for Optimal Data-Transfer Rate and Signal Integrity in Distributed Loads
- Ioff and Power-Up 3-State Support Hot Insertion
- Distributed VCC and GND Pins Minimize High-Speed Switching Noise
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Protection Exceeds JESD 22 2000-V Human-Body Model (A114-A) 200-V Machine Model (A115-A) 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model (A114-A)
- 200-V Machine Model (A115-A)
- 1000-V Charged-Device Model (C101)
产品概述
The SN74GTLP817 is a medium-drive fanout driver that provides LVTTL-to-GTLP and GTLP-to-LVTTL
signal-level translation. The device provides a high-speed interface between cards operating at LVTTL logic
levels and a backplane operating at GTLP signal levels. High-speed (about three times faster than standard
TTL or LVTTL) backplane operation is a direct result of GTLP reduced output swing (<1 V), reduced input
threshold levels, improved differential input, and OEC circuitry. The improved GTLP OEC circuitry minimizes
bus settling time and has been designed and tested using several backplane models. The medium drive allows
incident-wave switching in heavily loaded backplanes with equivalent load impedance down to 19 . BO1 and
BO2 can be tied together to drive an equivalent load impedance down to 11 .
GTLP is the Texas Instruments (TI) derivative of the Gunning Transceiver Logic (GTL) JEDEC standard
JESD 8-3. The ac specification of the SN74GTLP817 is given only at the preferred higher noise-margin GTLP,
but the user has the flexibility of using this device at either GTL (VTT = 1.2 V and V REF = 0.8 V) or GTLP
(VTT = 1.5 V and VREF = 1 V) signal levels.
Normally, the B port operates at GTLP signal levels. The A-port and control inputs operate at LVTTL logic levels
but are 5-V tolerant and are compatible with TTL and 5-V CMOS inputs. VREF is the B-port differential input
reference voltage.
GNDT is the TTL output ground, while GNDG is the GTLP output ground, and both may be separated from each
other for a quieter device.
This device is fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry
disables the outputs, preventing damaging current backflow through the device when it is powered down. The
power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down,
which prevents driver conflict.
This device features adjustable edge-rate control (ERC). Changing the ERC input voltage between GND and
VCC adjusts the B-port output rise and fall times. This allows the designer to optimize system data-transfer rate
and signal integrity to the backplane load. ERC automatically is selected to the same speed as alternate source
1-to-6 fanout drivers that use pin 18 for 3.3-V or 5-V VCC .
When VCC is between 0 and 1.5 V, the device is in the high-impedance state during power up or power down.
However, to ensure the high-impedance state above 1.5 V, the output-enable (OE\) input should be tied to VCC
through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of
the driver.
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