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  • 封装:8-SOIC(0.154",3.90mm 宽)
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:管件
  • 参考价格:$0.288

更新日期:2024-04-01 00:04:00

产品简介:具有–2V 下冲保护和电平转换功能的 5V、1:1 (SPST)、2 通道总线开关(高电平有效)

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  • 封装:8-SOIC(0.154",3.90mm 宽)
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:管件
  • 参考价格:$0.288

SN74CBTD3305CD 供应商

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SN74CBTD3305CD 中文资料属性参数

  • 标准包装:75
  • 类别:集成电路 (IC)
  • 家庭:逻辑 - 信号开关,多路复用器,解码器
  • 系列:74CBTD
  • 类型:FET 总线开关
  • 电路:1 x 1:1
  • 独立电路:2
  • 输出电流高,低:15mA,64mA
  • 电压电源:单电源
  • 电源电压:4.5 V ~ 5.5 V
  • 工作温度:-40°C ~ 85°C
  • 安装类型:表面贴装
  • 封装/外壳:8-SOIC(0.154",3.90mm 宽)
  • 供应商设备封装:8-SOIC
  • 包装:管件

产品特性

  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22 2000-V Human-Body Model (A114-B, Class II) 1000-V Charged-Device Model (C101)
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

产品概述

The SN74CBTD3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3305C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.The SN74CBTD3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

SN74CBTD3305CD 数据手册

数据手册 说明 数量 操作
SN74CBTD3305CD

DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH - 2-V UNDERSHOOT PROTECTION

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SN74CBTD3305CDR

DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH - 2-V UNDERSHOOT PROTECTION

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SN74CBTD3305CDR

Bus Switch 1 x 1:1 8-SOIC

18页,1.05M 查看

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