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分离式半导体热门型号
| 器件图 | 型号 | 制造商 | 封装 | 描述 | 价格 | |
|---|---|---|---|---|---|---|
| HGTG30N60B3D_Q | Fairchild Semiconductor |
IGBT 晶体管 600V IGBT UFS N-Channel |
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| HGTG40N60C3 | Fairchild Semiconductor |
IGBT 晶体管 |
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| HGTP20N35G3VL | Fairchild Semiconductor |
IGBT 晶体管 Coil Dri 20A 350V |
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| HN2E07JE(TE85L,F) | - |
Transistors Bipolar (BJT) Small Signal SBD + PNP (BRT) |
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| HN7G01FE-A(TE85L,F | - |
Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=50mA |
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| HN7G02FE(TE85L,F) | - |
Transistors Bipolar (BJT) Vceo=-50V Vds20V Ic=-100ma Id=50mA |
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| HN7G05FU(TE85L,F) | - |
Transistors Bipolar (BJT) Vceo=-50V Vds=20V Ic=-100ma Id=50mA |
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| HN7G06FE-A(TE85L,F | - |
Transistors Bipolar (BJT) Vceo=-12V Vceo=50V Ic=-400mA IC=100mA |
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| HN7G06FU-A(TE85L,F | - |
Transistors Bipolar (BJT) Vceo=-12V Vceo=50V 47K x 47Kohms |
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| HN7G08FE-A(TE85L,F | - |
Transistors Bipolar (BJT) Vceo=-12V Vceo=50V Ic=-400mA IC=100mA |
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| HN7G09FE(TE85L,F) | - |
Transistors Bipolar (BJT) Vceo=50V Vds=30V Ic=100mA Id=100mA |
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| HS3DB | Taiwan Semiconductor |
整流器 3A,200V,GLASS Pass HIGH Eff SMD Rect |
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| HUF76121P3 | Fairchild Semiconductor |
MOSFET 47a 30V N-Ch MOSFET |
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| HUFA75631P3 | Fairchild Semiconductor |
MOSFET 33a 100V N-Ch UltraFET |
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IPB26CNE8N G | - |
MOSFET N-CH 85V 35A |
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| IPD03N03LB G | - |
MOSFET N-CH 30V 90A |
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IPI100N06S3-03 | - |
MOSFET OptiMOS-T2 PWR TRANS 55V 100A |
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IPI25N06S3L-22 | - |
MOSFET OptiMOS-T PWR TRANS 55V 25A |
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| IPI50R140CP | - |
MOSFET CoolMOS PWR Trnsistr 23/15A |
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IPP05N03LA | - |
MOSFET N-CH 25V 80A |