FET,MOSFET热门型号
| 器件图 | 型号 | 制造商 | 封装 | 描述 | 价格 | |
|---|---|---|---|---|---|---|
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BSC0910NDIATMA1 | - |
MOSFET 2N-CH 25V 16A/31A TISON8 |
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BSC112N06LDATMA1 | - |
TRENCH 40<-<100V |
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BSM180D12P2E002 | - |
1200V, 204A, HALF BRIDGE, SILICO |
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BSM250D17P2E004 | - |
HALF BRIDGE MODULE CONSISTING OF |
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BSO211PNTMA1 | - |
MOSFET 2P-CH 20V 4.7A 8PDSO |
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BSZ215CHXTMA1 | - |
MOSFET N/P-CH 20V 8TSDSON |
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EPC2101 | - |
GAN TRANS ASYMMETRICAL HALF BRID |
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FF2MR12W3M1HB11BPSA1 | - |
LOW POWER EASY AG-EASY3B-3111 |
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FS55MR12W1M1HB11NPSA1 | - |
LOW POWER EASY AG-EASY1B-3111 |
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G06NP06S2 | - |
N/P60V,RD(MAX)<35M@10V,RD(MAX)<4 |
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G170P03S2 | - |
P-30V, -9A,RD<18M@-10V,VTH-1V~-2 |
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G1K8P06S2 | - |
P-60V,-3.2A,RD(MAX)<170M@-10V,VT |
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G200P04S2 | - |
P-40V,-9A,RD(MAX)<20M@-10V,VTH-1 |
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G4616 | - |
N+P/-40V,RD(MAX)<20M@10V,RD(MAX) |
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G4953S | - |
P+P -30V,RD(MAX)<60M@-10V,RD(MAX |
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G800N06S2 | - |
N60V, 3A,RD<80M@10V,VTH0.7V~1.2V |
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IPG20N04S4L07ATMA1 | - |
MOSFET 2N-CH 40V 20A 8TDSON |
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IPG20N06S4L11ATMA2 | - |
MOSFET_)40V 60V) |
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IRF7341GTRPBF | - |
MOSFET N-CH 55V 5.1A |
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MSCSM120AM08CT3AG | - |
PM-MOSFET-SIC-SBD~-SP3F |

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