FET,MOSFET热门型号
器件图 | 型号 | 制造商 | 封装 | 描述 | 价格 | |
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UT6KC5TCR | - |
60V 3.5A, DUAL NCH+NCH, DFN2020- |
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6706A | - |
N/P30V,6.5A/-5A,RD(MAX)<20M/45M@ |
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A5G38H045N-3700 | - |
A5G38H045N 3700-3980 MHZ REFEREN |
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CAB006M12GM3 | - |
1200V 2B HALF-BRIDGE |
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CAB008A12GM3 | - |
1200V 2B HALF-BRIDGE, ALN |
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CGHV14250P | - |
250W, GAN HEMT, 50V, 0.5-1.8GHZ, |
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CGHV40180P | - |
180W, GAN HEMT, 50V, DC-4.0GHZ, |
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EPC2101 | - |
GAN TRANS ASYMMETRICAL HALF BRID |
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FS45MR12W1M1B11BOMA1 | - |
MOSFET MODULE 1200V 50A |
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G06NP06S2 | - |
N/P60V,RD(MAX)<35M@10V,RD(MAX)<4 |
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G120P03S2 | - |
P-30V,-16A,RD(MAX)<14M@-10V,VTH- |
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G130N06S2 | - |
MOSFET, N+N-CH,60V,9A,RD(MAX)<13 |
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G180N06S2 | - |
MOSFET, N-CH, 60V,8A,SOP-8DUAL |
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G1K2C10S2 | - |
NP100V, 3A,RD<130M@10V,RD<200M@- |
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G1NP02LLE | - |
NP20V, 1.3A/-1.1A,RD<210M@4.5V,R |
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G2K2P10S2E | - |
P-100V,ESD,-3.5A,RD(MAX)<200M@-1 |
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G2K3N10L6 | - |
N100V, 3A,RD<220M@10V,VTH1.0V~2. |
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G450N10D52 | - |
N100V, 35A,RD<45M@10V,VTH1.5V~2. |
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G4953S | - |
P+P -30V,RD(MAX)<60M@-10V,RD(MAX |
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G60N04D52 | - |
N40V, 35A,RD<9M@10V,VTH1.0V~2.5V |