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FET,MOSFET热门型号

器件图 型号 制造商 封装 描述 价格 PDF
UT6KC5TCR UT6KC5TCR -

60V 3.5A, DUAL NCH+NCH, DFN2020-

6706A 6706A -

N/P30V,6.5A/-5A,RD(MAX)<20M/45M@

A5G38H045N-3700 A5G38H045N-3700 -

A5G38H045N 3700-3980 MHZ REFEREN

CAB006M12GM3 CAB006M12GM3 -

1200V 2B HALF-BRIDGE

CAB008A12GM3 CAB008A12GM3 -

1200V 2B HALF-BRIDGE, ALN

CGHV14250P CGHV14250P -

250W, GAN HEMT, 50V, 0.5-1.8GHZ,

CGHV40180P CGHV40180P -

180W, GAN HEMT, 50V, DC-4.0GHZ,

EPC2101 EPC2101 -

GAN TRANS ASYMMETRICAL HALF BRID

FS45MR12W1M1B11BOMA1 FS45MR12W1M1B11BOMA1 -

MOSFET MODULE 1200V 50A

G06NP06S2 G06NP06S2 -

N/P60V,RD(MAX)<35M@10V,RD(MAX)<4

G120P03S2 G120P03S2 -

P-30V,-16A,RD(MAX)<14M@-10V,VTH-

G130N06S2 G130N06S2 -

MOSFET, N+N-CH,60V,9A,RD(MAX)<13

G180N06S2 G180N06S2 -

MOSFET, N-CH, 60V,8A,SOP-8DUAL

G1K2C10S2 G1K2C10S2 -

NP100V, 3A,RD<130M@10V,RD<200M@-

G1NP02LLE G1NP02LLE -

NP20V, 1.3A/-1.1A,RD<210M@4.5V,R

G2K2P10S2E G2K2P10S2E -

P-100V,ESD,-3.5A,RD(MAX)<200M@-1

G2K3N10L6 G2K3N10L6 -

N100V, 3A,RD<220M@10V,VTH1.0V~2.

G450N10D52 G450N10D52 -

N100V, 35A,RD<45M@10V,VTH1.5V~2.

G4953S G4953S -

P+P -30V,RD(MAX)<60M@-10V,RD(MAX

G60N04D52 G60N04D52 -

N40V, 35A,RD<9M@10V,VTH1.0V~2.5V