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晶体管热门型号

器件图 型号 制造商 封装 描述 价格 PDF
BSZ075N08NS5ATMA1 BSZ075N08NS5ATMA1 -

MOSFET N-CH 80V 40A 8TSDSON
BSZ146N10LS5ATMA1 BSZ146N10LS5ATMA1 -

MOSFET N-CH 100V 40A TSDSON
BUK6Y33-60PX BUK6Y33-60PX -

MOSFET P-CH 60V 30A LFPAK56
CAB006M12GM3 CAB006M12GM3 -

1200V 2B HALF-BRIDGE
CAB008A12GM3 CAB008A12GM3 -

1200V 2B HALF-BRIDGE, ALN
CG2H40120P CG2H40120P -

120W, GAN HEMT, 28V, DC-4.0GHZ,
DDC114YUQ-13-F DDC114YUQ-13-F -

PREBIAS TRANSISTOR SOT363 T&R 10
DMT6005LSS-13 DMT6005LSS-13 -

MOSFET N-CH 60V 13.5A 8SO
EPC2101 EPC2101 -

GAN TRANS ASYMMETRICAL HALF BRID
G06NP06S2 G06NP06S2 -

N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
G120P03S2 G120P03S2 -

P-30V,-16A,RD(MAX)<14M@-10V,VTH-
G180N06S2 G180N06S2 -

MOSFET, N-CH, 60V,8A,SOP-8DUAL
G1K2C10S2 G1K2C10S2 -

NP100V, 3A,RD<130M@10V,RD<200M@-
G1NP02LLE G1NP02LLE -

NP20V, 1.3A/-1.1A,RD<210M@4.5V,R
G20N06D52 G20N06D52 -

N60V,RD(MAX)<30M@10V,RD(MAX)<40M
G2K2P10S2E G2K2P10S2E -

P-100V,ESD,-3.5A,RD(MAX)<200M@-1
G2K3N10L6 G2K3N10L6 -

N100V, 3A,RD<220M@10V,VTH1.0V~2.
G450N10D52 G450N10D52 -

N100V, 35A,RD<45M@10V,VTH1.5V~2.
G4953S G4953S -

P+P -30V,RD(MAX)<60M@-10V,RD(MAX
G60N04D52 G60N04D52 -

N40V, 35A,RD<9M@10V,VTH1.0V~2.5V