120W, GAN HEMT, 28V, DC-4.0GHZ,

PREBIAS TRANSISTOR SOT363 T&R 10

MOSFET N-CH 60V 13.5A 8SO

GAN TRANS ASYMMETRICAL HALF BRID

N/P60V,RD(MAX)<35M@10V,RD(MAX)<4

P-30V,-16A,RD(MAX)<14M@-10V,VTH-

MOSFET, N+N-CH,60V,9A,RD(MAX)<13

P-30V, -9A,RD<18M@-10V,VTH-1V~-2

MOSFET, N-CH, 60V,8A,SOP-8DUAL

NP100V, 3A,RD<130M@10V,RD<200M@-

P-60V,-3.2A,RD(MAX)<170M@-10V,VT

NP20V, 1.3A/-1.1A,RD<210M@4.5V,R

N60V,RD(MAX)<30M@10V,RD(MAX)<40M

P-100V,ESD,-3.5A,RD(MAX)<200M@-1

N100V, 3A,RD<220M@10V,VTH1.0V~2.

N100V, 35A,RD<45M@10V,VTH1.5V~2.

N+P/-40V,RD(MAX)<20M@10V,RD(MAX)

P+P -30V,RD(MAX)<60M@-10V,RD(MAX

N40V, 35A,RD<9M@10V,VTH1.0V~2.5V

N60V, 3A,RD<80M@10V,VTH0.7V~1.2V