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  • 封装:20-WFQFN 裸露焊盘
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:Digi-Reel®
  • 参考价格:$0.7748-$1.66

更新日期:2025-03-06

产品简介:具有可选增益的 2.1W 立体声、模拟输入 D 级音频放大器

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  • 封装:20-WFQFN 裸露焊盘
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:Digi-Reel®
  • 参考价格:$0.7748-$1.66

TPA2012D2RTJR 供应商

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TPA2012D2RTJR 中文资料属性参数

  • 标准包装:1
  • 类别:集成电路 (IC)
  • 家庭:线性 - 音頻放大器
  • 系列:-
  • 类型:D 类
  • 输出类型:2 通道(立体声)
  • 在某负载时最大输出功率 x 通道数量:2.1W x 2 @ 4 欧姆
  • 电源电压:2.5 V ~ 5.5 V
  • 特点:差分输入,短路保护和热保护,关机
  • 安装类型:表面贴装
  • 供应商设备封装:20-QFN 裸露焊盘(4x4)
  • 封装/外壳:20-WFQFN 裸露焊盘
  • 包装:®
  • 配用:296-21137-ND - EVALUATION MODULE FOR TPA2012D2
  • 其它名称:296-17692-6

产品特性

  • Output Power By Package: WQFN: 2.1 W/Ch Into 4 Ω at 5 V 1.4 W/Ch Into 8 Ω at 5 V 720 mW/Ch Into 8 Ω at 3.6 V DSBGA: 1.2 W/Ch Into 4 Ω at 5 V (Thermally Limited) 1.3 W/Ch Into 8 Ω at 5 V 720 mW/Ch Into 8 Ω at 3.6 V
  • WQFN: 2.1 W/Ch Into 4 Ω at 5 V 1.4 W/Ch Into 8 Ω at 5 V 720 mW/Ch Into 8 Ω at 3.6 V
  • 2.1 W/Ch Into 4 Ω at 5 V
  • 1.4 W/Ch Into 8 Ω at 5 V
  • 720 mW/Ch Into 8 Ω at 3.6 V
  • DSBGA: 1.2 W/Ch Into 4 Ω at 5 V (Thermally Limited) 1.3 W/Ch Into 8 Ω at 5 V 720 mW/Ch Into 8 Ω at 3.6 V
  • 1.2 W/Ch Into 4 Ω at 5 V (Thermally Limited)
  • 1.3 W/Ch Into 8 Ω at 5 V
  • 720 mW/Ch Into 8 Ω at 3.6 V
  • Only Two External Components Required
  • Power Supply Range: 2.5 V to 5.5 V
  • Independent Shutdown Control for Each Channel
  • Selectable Gain of 6, 12, 18, and 24 dB
  • Internal Pulldown Resistor on Shutdown Pins
  • High PSRR: 77 dB at 217 Hz
  • Fast Start-Up Time (3.5 ms)
  • Low Supply Current
  • Low Shutdown Current
  • Short-Circuit and Thermal Protection
  • Space-Saving Packages 2.01-mm × 2.01-mm NanoFree™ DSBGA (YZH) 4-mm × 4-mm Thin WQFN (RTJ) With PowerPAD™
  • 2.01-mm × 2.01-mm NanoFree™ DSBGA (YZH)
  • 4-mm × 4-mm Thin WQFN (RTJ) With PowerPAD™

产品概述

The TPA2012D2 is a stereo, filter-free, Class-D audio amplifier (Class-D amp) available in a DSBGA or WQFN package. The TPA2012D2 only requires two external components for operation.The TPA2012D2 features independent shutdown controls for each channel. The gain can be selected to 6, 12, 18, or 24 dB using the G0 and G1 gain select pins. High PSRR and differential architecture provide increased immunity to noise and RF rectification. In addition to these features, a fast start-up time and small package size make the TPA2012D2 class-D amp an ideal choice for both cellular handsets and PDAs.The TPA2012D2 is capable of driving 1.4 W/Ch at 5 V or 720 mW/Ch at 3.6 V into 8 Ω. The TPA2012D2 is also capable of driving 4 Ω. The TPA2012D2 is thermally limited in DSBGA and may not achieve 2.1 W/Ch for 4 Ω. The maximum output power in the DSBGA is determined by the ability of the circuit board to remove heat. Figure 33 shows thermally limited region of the DSBGA in relation to the WQFN package. The TPA2012D2 provides thermal and short-circuit protection.

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