LF356M

Advantages Replace Expensive Hybrid and Module FET Op Amps Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices Excellent for Low Noise Applications Using Either High or Low Source Impedance–Very Low 1/f Corner Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems Internal Compensation and Large Differential Input Voltage Capability
Replace Expensive Hybrid and Module FET Op Amps
Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
Excellent for Low Noise Applications Using Either High or Low Source Impedance–Very Low 1/f Corner
Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
Internal Compensation and Large Differential Input Voltage Capability
Common Features Low Input Bias Current: 30 pA Low Input Offset Current: 3 pA High Input Impedance: 1012 Ω Low Input Noise Current: 0.01 pA/√Hz High Common-Mode Rejection Ratio: 100 dB Large DC Voltage Gain: 106 dB
Low Input Bias Current: 30 pA
Low Input Offset Current: 3 pA
High Input Impedance: 1012 Ω
Low Input Noise Current: 0.01 pA/√Hz
High Common-Mode Rejection Ratio: 100 dB
Large DC Voltage Gain: 106 dB
Uncommon Features Extremely Fast Settling Time to 0.01%: 4 µs for the LFx55 devices 1.5 µs for the LFx56 1.5 µs for the LFx57 (AV = 5) Fast Slew Rate: 5 V/µs for the LFx55 12 V/µs for the LFx56 50 V/µs for the LFx57 (AV = 5) Wide Gain Bandwidth: 2.5 MHz for the LFx55 devices 5 MHz for the LFx56 20 MHz for the LFx57 (AV = 5) Low Input Noise Voltage: 20 nV/√Hz for the LFx55 12 nV/√Hz for the LFx56 12 nV/√Hz for the LFx57 (AV = 5)
Extremely Fast Settling Time to 0.01%: 4 µs for the LFx55 devices 1.5 µs for the LFx56 1.5 µs for the LFx57 (AV = 5)
4 µs for the LFx55 devices
1.5 µs for the LFx56
1.5 µs for the LFx57 (AV = 5)
Fast Slew Rate: 5 V/µs for the LFx55 12 V/µs for the LFx56 50 V/µs for the LFx57 (AV = 5)
5 V/µs for the LFx55
12 V/µs for the LFx56
50 V/µs for the LFx57 (AV = 5)
Wide Gain Bandwidth: 2.5 MHz for the LFx55 devices 5 MHz for the LFx56 20 MHz for the LFx57 (AV = 5)
2.5 MHz for the LFx55 devices
5 MHz for the LFx56
20 MHz for the LFx57 (AV = 5)
Low Input Noise Voltage: 20 nV/√Hz for the LFx55 12 nV/√Hz for the LFx56 12 nV/√Hz for the LFx57 (AV = 5)
20 nV/√Hz for the LFx55
12 nV/√Hz for the LFx56
12 nV/√Hz for the LFx57 (AV = 5)

产品概述

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

查看全部

LF356M 数据手册

数据手册	说明	数量	操作
LF356M	Series Monolithic JFET Input Operational Amplifiers	18 Pages页,1.05M	查看
LF356M	JFET Input Operational Amplifiers	23 Pages页,1.05M	查看
LF356M/NOPB	J-FET Amplifier 1 Circuit 8-SOIC	43页,2.32M	查看
LF356MX	JFET Input Operational Amplifiers	23 Pages页,1.05M	查看

LF356M 电路图

LF356M 相关产品

IC 索引： A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9