IRF640NSPBFInternational Rectifier
参考价格:暂无参考价搜索次数:0现货供应商:0 家现货库存总量:0
- 标准包装 :50
- 类别 :分离式半导体产品
- 家庭 :FET - 单
- 系列 :HEXFET®
- FET 型 :MOSFET N 通道，金属氧化物
- FET 特点 :标准型
- 漏极至源极电压(Vdss) :200V
- 电流 - 连续漏极(Id) @ 25° C :18A
- 开态Rds（最大）@ Id, Vgs @ 25° C :150 毫欧 @ 11A，10V
- Id 时的 Vgs(th)（最大） :4V @ 250µA
- 闸电荷(Qg) @ Vgs :67nC @ 10V
- 输入电容 (Ciss) @ Vds :1160pF @ 25V
- 功率 - 最大 :150W
- 安装类型 :表面贴装
- 封装/外壳 :TO-263-3，D²Pak（2 引线+接片），TO-263AB
- 供应商设备封装 :D2PAK
- 包装 :管件
- 其它名称 :*IRF640NSPBF
更多产品属性
综合指数
周搜索指数
| 序号 | 日期 | 搜索量 | 搜索量变化 | 搜索量变化幅度 |
|---|---|---|---|---|
| 1 | 2023-10-09-2023-10-15 | 4 |
-2
|
-33.33%
|
| 2 | 2023-10-02-2023-10-08 | 6 |
-2
|
-25.00%
|
| 3 | 2023-09-25-2023-10-01 | 8 |
1
|
14.29%
|
| 4 | 2023-09-18-2023-09-24 | 7 |
1
|
16.67%
|
| 5 | 2023-09-11-2023-09-17 | 6 |
-1
|
-14.29%
|
| 6 | 2023-09-04-2023-09-10 | 7 |
2
|
40.00%
|
| 7 | 2023-08-28-2023-09-03 | 5 |
-2
|
-28.57%
|
| 8 | 2023-08-21-2023-08-27 | 7 |
3
|
75.00%
|
| 9 | 2023-08-14-2023-08-20 | 4 |
0
|
0.00%
|
| 10 | 2023-07-17-2023-07-23 | 2 |
-1
|
-33.33%
|
| 11 | 2023-07-10-2023-07-16 | 3 |
-1
|
-25.00%
|
| 12 | 2023-07-03-2023-07-09 | 4 |
0
|
0.00%
|
| 13 | 2023-06-26-2023-07-02 | 1 |
0
|
0.00%
|
| 14 | 2023-06-12-2023-06-18 | 2 |
-7
|
-77.78%
|
| 15 | 2023-06-05-2023-06-11 | 9 |
-1
|
-10.00%
|
| 16 | 2023-05-29-2023-06-04 | 10 |
-1
|
-9.09%
|
| 17 | 2023-05-22-2023-05-28 | 11 |
0
|
0.00%
|
| 18 | 2023-05-15-2023-05-21 | 1 |
-1
|
-50.00%
|
| 19 | 2023-05-08-2023-05-14 | 2 |
-2
|
-50.00%
|
| 20 | 2023-05-01-2023-05-07 | 4 |
0
|
0.00%
|
| 21 | 2023-04-17-2023-04-23 | 2 |
0
|
0.00%
|
| 22 | 2023-04-10-2023-04-16 | 1 |
0
|
0.00%
|
| 23 | 2023-04-03-2023-04-09 | 1 |
0
|
0.00%
|
| 24 | 2023-03-27-2023-04-02 | 1 |
0
|
0.00%
|
| 25 | 2023-03-20-2023-03-26 | 1 |
-3
|
-75.00%
|
| 26 | 2023-03-13-2023-03-19 | 4 |
0
|
0.00%
|
| 27 | 2023-01-30-2023-02-05 | 2 |
0
|
0.00%
|
| 28 | 2023-01-23-2023-01-29 | 1 |
-2
|
-66.67%
|
| 29 | 2023-01-16-2023-01-22 | 3 |
-3
|
-50.00%
|
| 30 | 2023-01-09-2023-01-15 | 6 |
1
|
20.00%
|
| 31 | 2023-01-02-2023-01-08 | 5 |
0
|
0.00%
|