FDV303NFairchild Semiconductor
参考价格:0.0000搜索次数:0现货供应商:7 家现货库存总量:186290
- 产品培训模块 :High Voltage Switches for Power Processing
- 标准包装 :3,000
- 类别 :分离式半导体产品
- 家庭 :FET - 单
- 系列 :-
- FET 型 :MOSFET N 通道，金属氧化物
- FET 特点 :逻辑电平门
- 漏极至源极电压(Vdss) :25V
- 电流 - 连续漏极(Id) @ 25° C :680mA
- 开态Rds（最大）@ Id, Vgs @ 25° C :450 毫欧 @ 500mA，4.5V
- Id 时的 Vgs(th)（最大） :1.5V @ 250µA
- 闸电荷(Qg) @ Vgs :2.3nC @ 4.5V
- 输入电容 (Ciss) @ Vds :50pF @ 10V
- 功率 - 最大 :350mW
- 安装类型 :表面贴装
- 封装/外壳 :TO-236-3，SC-59，SOT-23-3
- 供应商设备封装 :SOT-23
- 包装 :带卷 (TR)
- 其它名称 :FDV303NTR
更多产品属性
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推荐供应商
| 供应商 | 产品型号 | 品牌 | 库存数量 | 批号 | 封装 | 说明 | 询价 |
|---|---|---|---|---|---|---|---|
| FDV303N | ONSEMI/安森美 | 8942 | 20+ 19+ | SOT23 | 只做原装，实单来谈 |