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分离式半导体热门型号
| 器件图 | 型号 | 制造商 | 封装 | 描述 | 价格 | |
|---|---|---|---|---|---|---|
| NDT452AP_J23Z | Fairchild Semiconductor |
MOSFET P-Channel FET Enhancement Mode |
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| NDT456P_Q | Fairchild Semiconductor |
MOSFET SOT-223 P-CH ENHANCE |
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| NE34018-T1-64 | - |
MOSFET L-S Band Lo No Amp |
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| NE434S01-T1B | - |
MOSFET S01 LO NO HJ FET S01 LO NO HJ FET |
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| NE76038-T1 | CEL |
MOSFET DISC BY NEC 5/99 |
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| NESG2021M16 | CEL |
射频硅锗晶体管 RO 551-NESG2021M16-A |
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| NESG2030M04 | CEL |
射频硅锗晶体管 NPN SiGe High Freq |
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| NESG2030M16 | CEL |
射频硅锗晶体管 NPN SiGe High Freq |
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| NESG2030M16-A | - |
射频硅锗晶体管 NPN SiGe High Freq |
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| NESG250134-EV09 | CEL |
射频硅锗晶体管 For NESG250134-AZ at 900 MHz |
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| NESG250134-EVPW04 | CEL |
射频硅锗晶体管 NPN Silicon Medium Pwr Transistor |
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| NESG260234-EV09 | CEL |
射频硅锗晶体管 NPN Silicon Medium Pwr Transistor |
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| NESG260234-EVPW04 | CEL |
射频硅锗晶体管 NPN Silicon Medium Pwr Transistor |
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| NESG260234-EVPW04-A | CEL |
射频硅锗晶体管 NPN Silicon Medium Power Transistor Eval Board |
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 |
NIF62514T3 | ON Semiconductor |
MOSFET 42V 6A N-Channel |
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| NS8MT-E3/45 | - |
整流器 1000 Volt 8.0 Amp 125 Amp IFSM |
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| NS8MTHE3/45 | - |
整流器 1000 Volt 8.0 Amp 125 Amp IFSM |
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| NSB8DT-E3/81 | - |
整流器 200 Volt 8.0 Amp 125 Amp IFSM |
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| NSB8GT-E3/81 | - |
整流器 400 Volt 8.0 Amp 125 Amp IFSM |
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| NSB8MT/81 | - |
发光二极管（通用、电源、转换） 1000 Volt 8.0 Amp 125 Amp IFSM |