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  • 封装:8-SOIC(0.154",3.90mm 宽)
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:带卷 (TR)
  • 参考价格:$2.461

更新日期:2024-04-01

产品简介:用于 1 个 SRAM 组的 SRAM 非易失性控制器 IC

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  • 封装:8-SOIC(0.154",3.90mm 宽)
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:带卷 (TR)
  • 参考价格:$2.461

BQ2201SN-NTR 供应商

  • 公司
  • 型号
  • 品牌
  • 封装/批号
  • 数量
  • 地区
  • 日期
  • 说明
  • 询价

BQ2201SN-NTR 中文资料属性参数

  • 标准包装:2,500
  • 类别:集成电路 (IC)
  • 家庭:存储器 - 控制器
  • 系列:-
  • 控制器类型:非易失性 SRAM
  • 电源电压:4.5 V ~ 5.5 V
  • 工作温度:-40°C ~ 85°C
  • 封装/外壳:8-SOIC(0.154",3.90mm 宽)
  • 供应商设备封装:8-SOIC
  • 包装:带卷 (TR)

产品特性

  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation

产品概述

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory. A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM. During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists. The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

BQ2201SN-NTR 数据手册

数据手册 说明 数量 操作
BQ2201SN-NTR

SRAM Nonvolatile Controller IC for 1 SRAM Bank 8-SOIC -40 to 85

15页,297K 查看
BQ2201SN-NTRG4

SRAM Nonvolatile Controller IC for 1 SRAM Bank 8-SOIC -40 to 85

15页,297K 查看

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