- 封装:16-SOIC(0.154",3.90mm 宽)
- RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
- 包装方式:带卷 (TR)
- 参考价格:$3.705
更新日期:2024-04-01
产品简介:用于 4 SRAM 内存组的 SRAM 非易失性控制器 IC
查看详情- 封装:16-SOIC(0.154",3.90mm 宽)
- RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
- 包装方式:带卷 (TR)
- 参考价格:$3.705
BQ2204ASNTR 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
BQ2204ASNTR 中文资料属性参数
- 标准包装:2,500
- 类别:集成电路 (IC)
- 家庭:存储器 - 控制器
- 系列:-
- 控制器类型:非易失性 SRAM
- 电源电压:4.5 V ~ 5.5 V
- 工作温度:0°C ~ 70°C
- 封装/外壳:16-SOIC(0.154",3.90mm 宽)
- 供应商设备封装:16-SOIC N
- 包装:带卷 (TR)
产品特性
- Power monitoring and switching for 3-volt battery-backup applications
- Write-protect control
- 2-input decoder for control of up to 4 banks of SRAM
- 3-volt primary cell inputs
- Less than 10ns chip-enable propagation delay
- 5% or 10% supply operation
产品概述
The CMOS bq2204A SRAM Non-volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCC input for an out-of-tolerance condi-tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM.
During a power failure, the external SRAMs are switched from the VCC supply to one of two 3V backup sup-plies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists.
During power-valid operation, a two-input decoder transparently selects one of up to four banks of SRAM.
BQ2204ASNTR 数据手册
数据手册 | 说明 | 数量 | 操作 |
---|---|---|---|
![]() |
SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-SOIC 0 to 70 |
15页,268K | 查看 |
![]() |
SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-SOIC 0 to 70 |
15页,268K | 查看 |