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  • 封装:16-SOIC(0.154",3.90mm 宽)
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:带卷 (TR)
  • 参考价格:$3.705

更新日期:2024-04-01

产品简介:用于 4 SRAM 内存组的 SRAM 非易失性控制器 IC

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  • 封装:16-SOIC(0.154",3.90mm 宽)
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:带卷 (TR)
  • 参考价格:$3.705

BQ2204ASNTR 供应商

  • 公司
  • 型号
  • 品牌
  • 封装/批号
  • 数量
  • 地区
  • 日期
  • 说明
  • 询价

BQ2204ASNTR 中文资料属性参数

  • 标准包装:2,500
  • 类别:集成电路 (IC)
  • 家庭:存储器 - 控制器
  • 系列:-
  • 控制器类型:非易失性 SRAM
  • 电源电压:4.5 V ~ 5.5 V
  • 工作温度:0°C ~ 70°C
  • 封装/外壳:16-SOIC(0.154",3.90mm 宽)
  • 供应商设备封装:16-SOIC N
  • 包装:带卷 (TR)

产品特性

  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 2-input decoder for control of up to 4 banks of SRAM
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation

产品概述

The CMOS bq2204A SRAM Non-volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory. A precision comparator monitors the 5V VCC input for an out-of-tolerance condi-tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM. During a power failure, the external SRAMs are switched from the VCC supply to one of two 3V backup sup-plies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists. During power-valid operation, a two-input decoder transparently selects one of up to four banks of SRAM.

BQ2204ASNTR 数据手册

数据手册 说明 数量 操作
BQ2204ASNTR

SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-SOIC 0 to 70

15页,268K 查看
BQ2204ASNTRG4

SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-SOIC 0 to 70

15页,268K 查看

IC 索引: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9