- 封装:8-SOIC(0.154",3.90mm 宽)
- RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
- 包装方式:管件
- 参考价格:$5.06253
更新日期:2024-04-01
产品简介:用于 1 个 SRAM 组的 SRAM 非易失性控制器 IC
查看详情- 封装:8-SOIC(0.154",3.90mm 宽)
- RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
- 包装方式:管件
- 参考价格:$5.06253
BQ2201SN-N 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
-
TI(德州仪器)
-
SOIC-8
2022+ -
12000
-
上海市
-
-
-
原装可开发票
BQ2201SN-N 中文资料属性参数
- 标准包装:75
- 类别:集成电路 (IC)
- 家庭:存储器 - 控制器
- 系列:-
- 控制器类型:非易失性 SRAM
- 电源电压:4.5 V ~ 5.5 V
- 工作温度:-40°C ~ 85°C
- 封装/外壳:8-SOIC(0.154",3.90mm 宽)
- 供应商设备封装:8-SOIC
- 包装:管件
产品特性
- Power monitoring and switching for 3-volt battery-backup applications
- Write-protect control
- 3-volt primary cell inputs
- Less than 10ns chip-enable propagation delay
- 5% or 10% supply operation
产品概述
The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCC input for an out-of-tolerance
condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.
During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a
power-valid condition exists.
The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.
BQ2201SN-N 数据手册
数据手册 | 说明 | 数量 | 操作 |
---|---|---|---|
![]() |
SRAM Nonvolatile Controller IC for 1 SRAM Bank 8-SOIC -40 to 85 |
15页,297K | 查看 |
![]() |
SRAM Nonvolatile Controller IC for 1 SRAM Bank 8-SOIC -40 to 85 |
15页,297K | 查看 |
![]() |
SRAM Nonvolatile Controller IC for 1 SRAM Bank 8-SOIC -40 to 85 |
15页,297K | 查看 |