V62/09621-01XE

Texas Instruments 逻辑集成电路

RoHS：
• 镉（Cd）/镉化合物 0.01%
• 六价隔（Cr6+）/六价隔化合物 0.10%
• 铅（Pb）/铅化合物 0.10%
• 汞（Hg）/汞化合物 0.10%
• 多溴联苯(PBB)0.10%
• 多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
说明：Gates (AND / NAND / OR / NOR) EP Sgl 3-Inp Pos AND Gate
参考价格：￥2.91-￥3.40

更新日期：2024-04-01 00:04:00

V62/09621-01XE

Texas Instruments 逻辑集成电路

产品简介：增强型产品、单通道、3 输入、1.65V 至 5.5V 32mA 驱动强度与门

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RoHS：
• 镉（Cd）/镉化合物 0.01%
• 六价隔（Cr6+）/六价隔化合物 0.10%
• 铅（Pb）/铅化合物 0.10%
• 汞（Hg）/汞化合物 0.10%
• 多溴联苯(PBB)0.10%
• 多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
说明：Gates (AND / NAND / OR / NOR) EP Sgl 3-Inp Pos AND Gate
参考价格：￥2.91-￥3.40

V62/09621-01XE 中文资料属性参数

制造商：Texas Instruments
产品种类：门（与/非与/或/非或）
封装：Reel
工厂包装数量：3000

产品特性

Available in the Texas Instruments NanoFree™ Package
Supports 5-V VCC Operation
Inputs Accept Voltages to 5.5 V
Max tpd of 5.9 ns at 3.3 V
Low Power Consumption, 10-µA Max ICC
±24-mA Output Drive at 3.3 V
Ioff Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Protection Exceeds JESD 22 2000-V Human-Body Model (A114-A) 200-V Machine Model (A115-A) 1000-V Charged-Device Model (C101)
2000-V Human-Body Model (A114-A)
200-V Machine Model (A115-A)
1000-V Charged-Device Model (C101)
SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS Controlled Baseline One Assembly/Test Site One Fabrication Site Available in Military (–55°C/125°C) Temperature Range(1) Extended Product Life Cycle Extended Product-Change Notification Product Traceability
Controlled Baseline
One Assembly/Test Site
One Fabrication Site
Available in Military (–55°C/125°C) Temperature Range(1)
Extended Product Life Cycle
Extended Product-Change Notification
Product Traceability

产品概述

The SN74LVC1G11 performs the Boolean function Y = A • B • C or Y = A\ + B\ + C\ in positive logic.NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

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