- RoHS:
镉(Cd)/镉化合物 0.01%
六价隔(Cr6+)/六价隔化合物 0.10%
铅(Pb)/铅化合物 0.10%
汞(Hg)/汞化合物 0.10%
多溴联苯(PBB)0.10%
多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
说明:Gates (AND / NAND / OR / NOR) EP Sgl 2 Inp Pos Nor Gate - 参考价格:¥1.32-¥3.73
更新日期:2024-04-01 00:04:00
产品简介:单路 2 输入、2V 至 5.5V 或非门(增强型产品)
查看详情- RoHS:
镉(Cd)/镉化合物 0.01%
六价隔(Cr6+)/六价隔化合物 0.10%
铅(Pb)/铅化合物 0.10%
汞(Hg)/汞化合物 0.10%
多溴联苯(PBB)0.10%
多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
说明:Gates (AND / NAND / OR / NOR) EP Sgl 2 Inp Pos Nor Gate - 参考价格:¥1.32-¥3.73
V62/08611-01XE 中文资料属性参数
- 制造商:Texas Instruments
- 产品种类:门(与/非与/或/非或)
- 产品:NOR
- 逻辑系列:AHC
- 栅极数量:Single
- 线路数量(输入/输出):2 / 1
- 高电平输出电流:- 8 mA
- 低电平输出电流:8 mA
- 传播延迟时间:11.4 ns, 7.5 ns
- Supply Voltage - Max:5.5 V
- Supply Voltage - Min:2 V
- 最大工作温度:+ 125 C
- 安装风格:SMD/SMT
- 封装 / 箱体:SC-70-5
- 封装:Reel
- 最小工作温度:- 55 C
- 输入线路数量:2
- 输出线路数量:1
- 工厂包装数量:3000
产品特性
- Controlled BaselineOne Assembly SiteOne Test SiteOne Fabrication Site
- One Assembly Site
- One Test Site
- One Fabrication Site
- Extended Temperature Performance of -55°C to 125°C
- Enhanced Diminishing Manufacturing Sources (DMS) Support
- Enhanced Product-Change Notification
- Qualification Pedigree(1)
- Operating Range of 2 V to 5.5 V
- Max tpd of 8.5 ns at 5 V
- Low Power Consumption, 10 µA Max ICC
- ±8 mA Output Drive at 5 V
- Schmitt Trigger Action at All Inputs Makes the Circuit Tolerant for Slower Input Rise and Fall Time
- ESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model (A114-A)
- 200-V Machine Model (A115-A)
- 1000-V Charged-Device Model (C101)
产品概述
This device contains a single 2-input NOR gate that performs the Boolean function Y = A B or Y = A + B in positive logic.
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