- RoHS:
镉(Cd)/镉化合物 0.01%
六价隔(Cr6+)/六价隔化合物 0.10%
铅(Pb)/铅化合物 0.10%
汞(Hg)/汞化合物 0.10%
多溴联苯(PBB)0.10%
多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
说明:Gates (AND / NAND / OR / NOR) Mil Enh Triple 3-Inp PosAND Gates - 参考价格:¥3.85-¥4.50
更新日期:2024-04-01 00:04:00
产品简介:3 通道、3 输入、2V 至 5.5V 高速 (7ns) 与门(增强型产品)
查看详情- RoHS:
镉(Cd)/镉化合物 0.01%
六价隔(Cr6+)/六价隔化合物 0.10%
铅(Pb)/铅化合物 0.10%
汞(Hg)/汞化合物 0.10%
多溴联苯(PBB)0.10%
多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
说明:Gates (AND / NAND / OR / NOR) Mil Enh Triple 3-Inp PosAND Gates - 参考价格:¥3.85-¥4.50
V62/04692-01XE 中文资料属性参数
- 制造商:Texas Instruments
- 产品种类:门(与/非与/或/非或)
- 产品:AND
- 逻辑系列:LV
- 栅极数量:3
- 线路数量(输入/输出):3 / 1
- 高电平输出电流:- 12 mA
- 低电平输出电流:12 mA
- 传播延迟时间:17.5 ns
- Supply Voltage - Max:5.5 V
- Supply Voltage - Min:2 V
- 最大工作温度:+ 105 C
- 安装风格:SMD/SMT
- 封装 / 箱体:TSSOP-14
- 封装:Reel
- 最小工作温度:- 40 C
- 输入线路数量:3
- 输出线路数量:1
- 工厂包装数量:2000
产品特性
- Controlled Baseline One Assembly/Test Site, One Fabrication Site
- One Assembly/Test Site, One Fabrication Site
- Extended Temperature Performance of 40°C to 105°C
- Enhanced Diminishing Manufacturing Sources (DMS) Support
- Enhanced Product-Change Notification
- Qualification Pedigree
- 2-V to 5.5-V VCC Operation
- Typical VOLP (Output Ground Bounce) <0.8 V at VCC= 3.3 V, TA = 25°C
- Typical VOHV (Output VOH Undershoot) >2.3 V at VCC = 3.3 V, TA = 25°C
- Supports Mixed-Mode Voltage Operation on All Ports
- Ioff Supports Partial-Power-Down Mode Operation
产品概述
This triple 3-input positive-AND gate is designed for 2-V to 5.5-V VCC operation.The SN74LV11A performs the Boolean function Y = A B C or Y = (A\ + B\ + C\)\ in positive logic.This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
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