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  • 封装:8-SOIC(0.154",3.90mm 宽)
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:带卷 (TR)
  • 参考价格:$0.788

更新日期:2024-04-01 00:04:00

产品简介:单通道、36V、6.4MHz 运算放大器

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  • 封装:8-SOIC(0.154",3.90mm 宽)
  • RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
  • 包装方式:带卷 (TR)
  • 参考价格:$0.788

TLE2161AIDR 供应商

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TLE2161AIDR 中文资料属性参数

  • 标准包装:2,500
  • 类别:集成电路 (IC)
  • 家庭:Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
  • 系列:Excalibur™
  • 放大器类型:J-FET
  • 电路数:1
  • 输出类型:-
  • 转换速率:10 V/µs
  • 增益带宽积:6.4MHz
  • -3db带宽:-
  • 电流 - 输入偏压:4pA
  • 电压 - 输入偏移:500µV
  • 电流 - 电源:290µA
  • 电流 - 输出 / 通道:80mA
  • 电压 - 电源,单路/双路(±):±3.5 V ~ 18 V
  • 工作温度:-40°C ~ 85°C
  • 安装类型:表面贴装
  • 封装/外壳:8-SOIC(0.154",3.90mm 宽)
  • 供应商设备封装:8-SOIC
  • 包装:带卷 (TR)

产品特性

  • Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 , VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 , VCC± = ± 15 V
  • Low Supply Current...280 uA Typ
  • Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/us Typ Gain-Bandwidth Product = 6.5 MHz Typ
  • Wide Operating Supply Voltage Range VCC ± = ± 3.5 V to ± 18 V
  • High Open-Loop Gain...280 V/mV Typ
  • Low Offset Voltage...500 uV Max
  • Low Offset Voltage Drift With Time 0.04 uV/Month Typ
  • Low Input Bias Current...5 pA Typ

产品概述

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product. In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use. The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR). A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

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