- 封装:14-SOIC(0.154",3.90mm 宽)
- RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
- 包装方式:管件
- 参考价格:$2.6752-$5.85
更新日期:2024-04-01 00:04:00
产品简介:具有 1.4V 电源电压的四通道、16V、1.7MHz、5mV 失调电压、输入接近 V- 的运算放大器
查看详情- 封装:14-SOIC(0.154",3.90mm 宽)
- RoHS:无铅 / 符合限制有害物质指令(RoHS)规范要求
- 包装方式:管件
- 参考价格:$2.6752-$5.85
TLC254ACD 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
-
TI(德州仪器)
-
SOIC-14
2022+ -
12000
-
上海市
-
-
-
原装可开发票
-
TI
-
SOP-14P
23+ -
15000
-
上海市
-
-
-
中国区代理原装现货热卖特价
-
TI
-
SOIC14
23+ -
5800
-
上海市
-
-
-
进口原装现货,杜绝假货。
TLC254ACD 中文资料属性参数
- 标准包装:50
- 类别:集成电路 (IC)
- 家庭:Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
- 系列:LinCMOS™
- 放大器类型:通用
- 电路数:4
- 输出类型:-
- 转换速率:5.3 V/µs
- 增益带宽积:2.2MHz
- -3db带宽:-
- 电流 - 输入偏压:0.7pA
- 电压 - 输入偏移:900µV
- 电流 - 电源:4.5mA
- 电流 - 输出 / 通道:-
- 电压 - 电源,单路/双路(±):1.4 V ~ 16 V,±0.7 V ~ 8 V
- 工作温度:0°C ~ 70°C
- 安装类型:表面贴装
- 封装/外壳:14-SOIC(0.154",3.90mm 宽)
- 供应商设备封装:14-SOIC
- 包装:管件
- 其它名称:296-2902-5
产品特性
- A-Suffix Versions Offer 5-mV VIO
- B-Suffix Versions Offer 2-mV VIO
- Wide Range of Supply Voltages 1.4 V to 16 V
- True Single-Supply Operation
- Common-Mode Input Voltage Includes the Negative Rail
- Low Noise...25 nV/Hz\ Typ at f = 1 kHz (High-Bias Version)
产品概述
The TLC254, TLC254A, TLC254B, TLC25L4, TLC254L4A, TLC254L4B, TLC25M4, TLC25M4A and TL25M4B are low-cost, low-power quad operational amplifiers designed to operate with single or dual supplies. These devices utilize the Texas Instruments silicon gate LinCMOSTM process, giving them stable input-offset voltages that are available in selected grades of 2, 5, or 10 mV maximum, very high input impedances, and extremely low input offset and bias currents. Because the input common-mode range extends to the negative rail and the power consumption is extremely low, this series is ideally suited for battery-powered or energy-conserving applications. The series offers operation down to a 1.4-V supply, is stable at unity gain, and has excellent noise characteristics.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in degradation of the device parametric performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for these devices include many areas that have previously been limited to BIFET and NFET product types. Any circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of these devices. Many features associated with bipolar technology are available with LinCMOS operational amplifiers without the power penalties of traditional bipolar devices.
General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with these devices. Remote and inaccessible equipment applications are possible using their low-voltage and low-power capabilities. These devices are well suited to solve the difficult problems associated with single-battery and solar-cell-powered applications. This series includes devices that are characterized for the commercial temperature range and are available in 14-pin plastic dip and the small-outline packages. The device is also available in chip form.
These devices are characterized for operation from 0°C to 70°C.
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