TIP32C

TRANS PNP 100V 3A TO-220

Dated : 21/09/2016 Rev: 01 TOP DYNAMIC TIP32C PNP Silicon Epitaxial Planar Transistor for power switching and amplifier applications Absolute Maximum Ratings (T a = 25 O C) Parameter Symbol Value Unit Collector Base Voltage -V CBO 100 V Collector Emitter Voltage -V CEO 100 V Emitter Base Voltage -V EBO 5 V Collector Current -I C 3 A Collector Current (Pulse) -I CP 5 A Base Current -I B 1 A Power Dissipation (T a = 25 O C) P tot 2 W Power Dissipation (T c = 25 O C) P tot 40 W Junction Temperature T j 150 O C Storage Temperature Range T s - 65 to + 150 O C Characteristics at T a = 25 O C Parameter Symbol Min. Max. Unit DC Current Gain at -V CE = 4 V, -I C = 1 A at -V CE = 4 V, -I C = 3 A h FE h FE 25 10 - 50 - - Collector Emitter Sustaining Voltage at -I C = 30 mA -V CEO(sus) 100 - V Collector Cutoff Current at -V CE = 100 V -I CES - 0.2 mA Collector Cutoff

TRANS PNP 100V 3A TO-220

TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:40W; DC Collector Current:3A; DC Current Gain hFE:3; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Av Current Ic:3A; Collector Emitter Voltage Vces:-1.2V; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:20; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:2W; Power Dissipation Ptot Max:40W; Te...