TIP31C

TRANS NPN 100V 3A TO-220

Dated：21/09/2016 Rev：03 TOP DYNAMIC TIP31C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications Absolute Maximum Ratings (T a = 25 O C) Parameter Symbol Value Unit Collector Base Voltage V CBO 100 V Collector Emitter Voltage V CEO 100 V Emitter Base Voltage V EBO 5 V Collector Current I C 3 A Collector Current (Pulse) I CP 5 A Base Current I B 1 A Power Dissipation (T a = 25 O C) P tot 2 W Power Dissipation (T c = 25 O C) P tot 40 W Junction Temperature T j 150 O C Storage Temperature Range T s - 65 to + 150 O C Characteristics at T a = 25 O C Parameter Symbol Min. Max. Unit DC Current Gain at V CE = 4 V, I C = 1 A at V CE = 4 V, I C = 3 A h FE h FE 25 10 - 50 - - Collector Emitter Cutoff Current at V CE = 100 V I CES - 0.2 mA Collector Emitter Cutoff Current at V CE = 60 V I CEO - 0.3 mA Emitter Base Cutoff Current at V EB =

TRANS NPN 100V 3A TO-220AB

TRANSISTOR, NPN, TO-220; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Current Ic Continuous a Max:3A; Voltage, Vce Sat Max:1.2V; Power Dissipation:2W; Min Hfe:20; ft, Typ:3MHz; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Application Code:PGP; Current Ic Max:3A; Current Ic hFE:0.5A; No. of Pins:3; Power, Ptot:40W; Transistors, No. of:1; Voltage, Vcbo:40V; ft, Min:3MHz

BIPOLAR TRANSISTOR, NPN, 100V, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain Max (hfe):25; No. of Pins:3 ;RoHS Compliant: Yes