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更新日期:2024-04-01 00:04:00

产品简介:NUT DRIVER HEX SKT 1/4" 3.75"

SS8 供应商

  • 公司
  • 型号
  • 品牌
  • 封装/批号
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  • 说明
  • 询价

SS8 中文资料属性参数

  • 现有数量:4现货
  • 价格:1 : ¥93.85000散装
  • 系列:-
  • 包装:散装
  • 产品状态:停产
  • 工具类型:螺母扳手
  • 尖头 - 类型:六角插口
  • 尺寸:1/4"
  • 长度 - 插片:1.50"(38.1mm)
  • 长度 - 总体:3.75"(95.3mm)
  • 特性:表面镀铬,带色码,中空轴,短粗

SS8 数据手册

数据手册 说明 数量 操作
SS8050

TRANSISTOR (NPN)

1 Pages页,59K 查看
SS8050

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Power dissipation P CM : 1 W (T A =25 ℃) : 2 W (T C =25 ℃) MAXIMUM RATINGS (T A =25 ℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 1.5 A T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100uA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100 μA, I C =0 5 V Collector cut-off current I CBO V CB =40V, I E =0 0.1 μA Emi

2页,166K 查看
SS8050

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1页,61K 查看
SS8050 SOT-23

Complimentary to SS8550

2页,867K 查看
SS8050 SOT-323

Complimentary to SS8550

2页,840K 查看
SS8050_841

       !    "    #$%&'    (()  )*     !'        (()+$  ,(- .   /0   .                      !                                          !"   #$                $              "   !              #"   !           $"   !   %     "   &$ '    %     "  &            (    &"  & !$   

1页,61K 查看
SS8050_841

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Power dissipation P CM : 1 W (T A =25 ℃) : 2 W (T C =25 ℃) MAXIMUM RATINGS (T A =25 ℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 1.5 A T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100uA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100 μA, I C =0 5 V Collector cut-off current I CBO V CB =40V, I E =0 0.1 μA Emi

2页,166K 查看
SS8050LT1

SOT-323 Plastic-Encapsulate Transistors

1页,89K 查看
SS8-2

SPACER RND PLAST #8SCREW 1/4"

1页,47K 查看
SS8-2

Round Spacer Unthreaded #8 PVC 0.250" (6.35mm) 1/4" Gray

1页,18K 查看

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