NTE4

COMPLEMENTARY METAL OXIDE SILICON

Small Signal MOSFET

Small Signal MOSFET

N CHANNEL MOSFET, 20V, 915mA, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:915mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:760mV ;RoHS Compliant: Yes

Transistor; Transistor Type:JFET; Breakdown Voltage, V(br):-25V; Gate-Source Cutoff Voltage Max, Vgs(off):6V; Power Dissipation, Pd:310mW; No. of Pins:3; Current Rating:5mA; Voltage Rating:-25V

JFET-N-CH GEN PURP AMP JFET-N-CH,GEN PURP AMP NTE Field Effect Transistor, Polarity and Material: JFET N Channel, Voltage Gate to Source (Min): 50 V, Cutoff Voltage Gate to Source Max (Off): 1.5 V, Input Capacitance (Max): 13 pF, Drain Current Max (Off): 20 mA, Case Style: TO92

T-NPN-SI GEN PURP AMP T-NPN,SI GEN PURP AMP NTE Silicon Darlington Transistor, Maximum Collector Power Dissipation: 0.625 W, Maximum Continuous Collector Current: 0.5 A, Maximum Breakdown Voltage: 100 V, Typical Forward Current Gain: 10000, Case Style: TO92

Silicon P-Channel JFET Transistor AF Amp

Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Silicon N-Channel JFET Transistor Chopper, High Speed Switch