NTE399

更新日期：2024-04-01 00:04:00

NTE399 数据手册

数据手册	说明	数量	操作
NTE399	Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:300V; Power Dissipation, Pd:900mW; DC Current Gain Min (hfe):100; Package/Case:3-TO-92; C-E Breakdown Voltage:300V; DC Collector Current:100mA ;RoHS Compliant: Yes	2页,17K	查看

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