NTE291

更新日期：2024-04-01 00:04:00

NTE291 数据手册

数据手册	说明	数量	操作
NTE291	Small Signal Bipolar Transistor; Transis; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:130V; Power Dissipation Pd:1.8W; DC Collector Current:4A; DC Current Gain hFE:150; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Gain Bandwidth ft Typ:4MHz; Hfe Min:2; Package / Case:TO-220; Power Dissipation Pd:1.8W	2页,25K	查看

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