NTE250

更新日期：2024-04-01 00:04:00

NTE250 数据手册

数据手册	说明	数量	操作
NTE250	Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:100V; Power Dissipation, Pd:150W; DC Current Gain Min (hfe):1000; Package/Case:3-TO-3; C-E Breakdown Voltage:100V; DC Collector Current:16A ;RoHS Compliant: Yes	2页,26K	查看
NTE2501	RF TRANSISTOR, NPN, 600mV, 70MHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600mV; Transition Frequency Typ ft:70MHz; Power Dissipation Pd:1.5W; DC Collector Current:100mA; DC Current Gain Max (hfe):200 ;RoHS Compliant: Yes	2页,22K	查看
NTE2502	TRANSISTOR PNP SILICON 300V IC=0.1A TO-126ML CASE HIGH VOLTA	2页,25K	查看
NTE2504	Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation, Pd:0.2W; DC Current Gain Min (hfe):220; C-E Breakdown Voltage:65V; DC Collector Current:0.1A; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No ;RoHS Compliant: Yes	2页,21K	查看
NTE2507	TRANSISTOR,BJT,NPN,200V V(BR)CEO,400MA I(C),TO-220AB ;ROHS COMPLIANT: YES	1页,19K	查看
NTE2508	BIPOLAR TRANSISTOR, NPN, 120V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency Typ ft:400MHz; Power Dissipation Pd:1.3W; DC Collector Current:300mA; DC Current Gain Max (hfe):40 ;RoHS Compliant: Yes	2页,22K	查看

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