NTE238

更新日期：2024-04-01 00:04:00

NTE238 数据手册

数据手册	说明	数量	操作
NTE238	BIPOLAR TRANSISTOR, NPN, 750V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:750V; Power Dissipation Pd:100W; DC Collector Current:8A; DC Current Gain Max (hfe):8; Operating Temperature Range:-65°C to +150°C ;RoHS Compliant: Yes	2页,22K	查看
NTE2380	Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch	3 Pages页,30K	查看
NTE2381 (P-Ch)	Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch	3 Pages页,30K	查看
NTE2382	MOSFET N-Channel Enhancement Mode, High Speed Switch (Compl to NTE2383)	3 Pages页,27K	查看
NTE2383	MOSFET P-Channel Enhancement Mode, High Speed Switch (Compl to NTE2382)	3 Pages页,26K	查看
NTE2388	N CHANNEL MOSFET, 200V, 18A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes	3页,27K	查看

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