NTE2379

更新日期：2024-04-01 00:04:00

NTE2379 数据手册

数据手册	说明	数量	操作
NTE2379	PWR MOSFET-N CHAN 600V-6A PWR MOSFET-N CHAN 600V,6A NTE Power MOS Field Effect Transistor, N-Channel Enhancement Mode High Speed Switch, Case Style: TO-220, Drain to Source Breakdown Voltage: 600 V Min, Gate to Source Cutoff Voltage: 4 V Max, Gate to Source Breakdown Voltage: +/-20 V Max	3页,27K	查看

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