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NTE234
双极性晶体管 - 射频- 参考价格：CNY 8.00-CNY 9.90
更新日期：2024-04-01 00:04:00
NTE234
双极性晶体管 - 射频- 参考价格：CNY 8.00-CNY 9.90
NTE234 数据手册
| 数据手册 | 说明 | 数量 | 操作 |
|---|---|---|---|
 NTE234
|
RF TRANSISTOR, PNP, -300mV, 100MHZ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300mV; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain Max (hfe):700 ;RoHS Compliant: Yes |
2页,22K | 查看 |
|
NTE2343
|
T-NPN-SI DARLINGTON T-NPN,SI DARLINGTON NTE Silicon Darlington Transistor, Maximum Collector Power Dissipation: 80 W, Maximum Continuous Collector Current: 12 A, Maximum Breakdown Voltage: 120 V, Maximum Continuous Base Current: 200 mA, Typical Forward Current Gain: 1000 Min |
2页,23K | 查看 |
|
NTE2344
|
T-PNP-SI DARLINGTON T-PNP,SI DARLINGTON NTE Silicon Darlington Transistor, Case Style: TO-220, Maximum Continuous Collector Current: 12 A, Maximum Breakdown Voltage: 120 V, Maximum Continuous Base Current: 200 mA, Typical Forward Current Gain: 1000 Min |
2页,23K | 查看 |
|
NTE2347
|
BIPOLAR TRANSISTOR, NPN, 80V, TO-39; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:80V; Transition Frequency Typ, ft:50MHz; Power Dissipation, Pd:1W; DC Collector Current:5A; DC Current Gain Max (hfe):40 ;RoHS Compliant: Yes |
2页,22K | 查看 |
|
NTE2348
|
BIPOLAR TRANSISTOR, NPN, 800V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:800V; Transition Frequency Typ, ft:15MHz; Power Dissipation, Pd:150W; DC Collector Current:12A; DC Current Gain Max (hfe):10 ;RoHS Compliant: Yes |
2页,23K | 查看 |
|
NTE2349
|
DARLINGTON TRANSISTOR, NPN, 120V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Power Dissipation Pd:300W; DC Collector Current:50A; DC Current Gain hFE:1000; Operating Temperature Range:-55°C to +200°C |
2页,27K | 查看 |