MMBTA06

MMBTA05 THRU MMBTA06 NPN Small Signal General Purpose Amplifier Transistors Features ? Epitaxial Planar Die Construction ? Complementary PNP Types Available (MMBTA55/MMBTA56) ? Ideal for Medium Power Amplification and Switching. Maximum Ratings Symbol Rating Rating Unit V CEO Collector-Emitter Voltage MMBTA05 MMBTA06 60 80 V V CBO Collector-Base Voltage MMBTA05 MMBTA06 60 80 V V EBO Emitter-Base Voltage 4.0 V I C Collector Current-Continuous 500 mA P DPowerDissipation* 300mW RθJA Thermal Resistance, Junction to Ambient 357 K/W T J Operating Junction Temperature -55 to +150
T STG Storage Temperature -55 to +150
Electrical Characteristics @ 25
Unless Otherwise Specified Symbol Parameter Min MaxUnits OFF CHARACTERISTICS V (BR)CEO Collector-Emitter Breakdown Voltage (I C=1.0mAdc, I B=0) MMBTA05 MMBTA06 60 80 --- --- Vdc V (BR)EBO Emitter-Base Breakdown Voltage (I E=100μAdc, I C=0) 4.0---Vdc I CBO Collector Cutoff Current (V CB=60Vdc, I E=0) MMBTA05 (V CB=80Vdc, I

For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56

0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 4.0 V Collector Current IC 500 mA Power Dissipation at TSB = 50 ?C Ptot 255 1) mW 300 2) Thermal Resistance Junction to Ambiant Air Rq JA 560 1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS -65 to +150 °C Note: (1) Device on fiberglass substrate, see layout on third page. (2) Device on alumina substrate. MMBTA06 Small Signal Transistors (NPN) 12/13/99 Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 Top View .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Features ? NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ? As complementary typ

MMBTA05 THRU MMBTA06 NPN Small Signal General Purpose Amplifier Transistors Features ? Epitaxial Planar Die Construction ? Complementary PNP Types Available (MMBTA55/MMBTA56) ? Ideal for Medium Power Amplification and Switching. Maximum Ratings Symbol Rating Rating Unit V CEO Collector-Emitter Voltage MMBTA05 MMBTA06 60 80 V V CBO Collector-Base Voltage MMBTA05 MMBTA06 60 80 V V EBO Emitter-Base Voltage 4.0 V I C Collector Current-Continuous 500 mA P DPowerDissipation* 300mW RθJA Thermal Resistance, Junction to Ambient 357 K/W T J Operating Junction Temperature -55 to +150
T STG Storage Temperature -55 to +150
Electrical Characteristics @ 25
Unless Otherwise Specified Symbol Parameter Min MaxUnits OFF CHARACTERISTICS V (BR)CEO Collector-Emitter Breakdown Voltage (I C=1.0mAdc, I B=0) MMBTA05 MMBTA06 60 80 --- --- Vdc V (BR)EBO Emitter-Base Breakdown Voltage (I E=100μAdc, I C=0) 4.0---Vdc I CBO Collector Cutoff Current (V CB=60Vdc, I E=0) MMBTA05 (V CB=80Vdc, I

Driver Transistors(NPN Silicon)

Driver Transistors(NPN Silicon)

TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:100; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Gain Bandwidth ft Min:100MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:225mW; Power Dissipation Ptot Max:225mW; SMD Marking:1GM; Tape Width:8mm; Termination Type:SMD; Transistor Ty...

Driver Transistor