MMBT3906LT1

数据手册	说明	数量	操作
MMBT3906LT1	General Purpose Transistor(PNP Silicon)	5 Pages页,98K	查看
MMBT3906LT1	General Purpose Transistor(PNP Silicon)	6 Pages页,98K	查看
MMBT3906LT1G	General Purpose Transistor(PNP Silicon)	6 Pages页,98K	查看
MMBT3906LT1G	? Semiconductor Components Industries, LLC, 2011 January, 2011 ? Rev. 9 1 Publication Order Number: MMBT3906LT1/D MMBT3906LT1G General Purpose Transistor PNP Silicon Features ? These Devices are Pb ?Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector ?Emitter Voltage V CEO ?40 Vdc Collector ?Base Voltage V CBO ?40 Vdc Emitter ?Base Voltage V EBO ?5.0 Vdc Collector Current ? Continuous I C ?200 mAdc Collector Current ? Peak (Note 3) I CM ?800 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR ?5 Board (Note 1) @ T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction ?to ?Ambient R JA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) @ T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction ?to ?Ambient R JA 417 °C/W Junction and Storage Temperature T J , T stg ?55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum	7页,117K	查看
MMBT3906LT1G	? Semiconductor Components Industries, LLC, 2004 February, 2004 ? Rev. 4 1 Publication Order Number: MMBT3906LT1/D MMBT3906LT1 Preferred Device General Purpose Transistor PNP Silicon Features ? Pb?Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector?Emitter Voltage V CEO ?40 Vdc Collector?Base Voltage V CBO ?40 Vdc Emitter?Base Voltage V EBO ?5.0 Vdc Collector Current ? Continuous I C ?200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board (Note 1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance Junction to Ambient R JA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance Junction?to?Ambient R JA 417 °C/W Junction and Storage Temperature T J , T stg ?55 to +150 °C 1. FR?5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com Preferred devices are recommended choices for futu	6页,101K	查看
MMBT3906LT1G_818	? Semiconductor Components Industries, LLC, 2004 February, 2004 ? Rev. 4 1 Publication Order Number: MMBT3906LT1/D MMBT3906LT1 Preferred Device General Purpose Transistor PNP Silicon Features ? Pb?Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector?Emitter Voltage V CEO ?40 Vdc Collector?Base Voltage V CBO ?40 Vdc Emitter?Base Voltage V EBO ?5.0 Vdc Collector Current ? Continuous I C ?200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board (Note 1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance Junction to Ambient R JA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance Junction?to?Ambient R JA 417 °C/W Junction and Storage Temperature T J , T stg ?55 to +150 °C 1. FR?5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com Preferred devices are recommended choices for futu	6页,101K	查看
MMBT3906LT1G_818	? Semiconductor Components Industries, LLC, 2011 January, 2011 ? Rev. 9 1 Publication Order Number: MMBT3906LT1/D MMBT3906LT1G General Purpose Transistor PNP Silicon Features ? These Devices are Pb ?Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector ?Emitter Voltage V CEO ?40 Vdc Collector ?Base Voltage V CBO ?40 Vdc Emitter ?Base Voltage V EBO ?5.0 Vdc Collector Current ? Continuous I C ?200 mAdc Collector Current ? Peak (Note 3) I CM ?800 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR ?5 Board (Note 1) @ T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction ?to ?Ambient R JA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) @ T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction ?to ?Ambient R JA 417 °C/W Junction and Storage Temperature T J , T stg ?55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum	7页,117K	查看

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