- 参考价格:¥11.39-¥24.91
更新日期:2024-04-01 00:04:00
LPC660IMX/NOPB 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
-
NSTI/ELNAF
-
SOP-14
1911+ -
90
-
上海市
-
-
-
原装现货,精专配套,正品BOM表报价
-
TI/德州仪器
-
-
21+ -
90000
-
上海市
-
-
LPC660IMX/NOPB 中文资料属性参数
- 制造商:National Semiconductor (TI)
- 通道数量:4
- 共模抑制比(最小值):63 dB
- 输入补偿电压:6 mV at 5 V
- 工作电源电压:9 V, 12 V
- 安装风格:SMD/SMT
- 封装 / 箱体:SOIC-14 Narrow
- 转换速度:0.05 V/us at 5 V
- 关闭:No
- 最大工作温度:+ 85 C
- 封装:Reel
- 最小工作温度:- 40 C
- 工厂包装数量:2500
- 电源电流:0.24 mA at 5 V
- Supply Voltage - Max:15 V
- Supply Voltage - Min:5 V
- 技术:CMOS
- 电压增益 dB:120 dB
产品特性
- Rail-to-rail output swing
- Micropower operation: (1 mW)
- Specified for 100 kΩ and 5 kΩ loads
- High voltage gain: 120 dB
- Low input offset voltage: 3 mV
- Low offset voltage drift: 1.3 μV/°C
- Ultra low input bias current: 2 fA
- Input common-mode includes V−
- Operation range from +5V to +15V
- Low distortion: 0.01% at 1 kHz
- Slew rate: 0.11 V/μs
- Full military temp. range available
产品概述
The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply.
It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output
swing in addition to an input common-mode range that includes ground. Performance limitations that
have plagued CMOS amplifiers in the past are not a problem with this design. Input
VOS, drift, and broadband noise as well as voltage gain (into 100 kΩ and 5
kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply
requirement is typically less than 1 mW.This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a
single CMOS operational amplifier with these same features.
LPC660IMX/NOPB 数据手册
| 数据手册 | 说明 | 数量 | 操作 |
|---|---|---|---|
LPC660IMX/NOPB
|
General Purpose Amplifier 4 Circuit Rail-to-Rail 14-SOICN |
24页,1.29M | 查看 |
LPC660IMX/NOPB 电路图
LPC660IMX/NOPB 电路图
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