- 参考价格:¥10.83-¥9.73
更新日期:2024-04-01 00:04:00
LP2998MA/NOPB 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
-
TI/德州仪器
-
SOP8
21+ -
10000
-
杭州
-
-
-
只做原装,大量现货供应
-
TI(德州仪器)
-
SOIC-8
2022+ -
12000
-
上海市
-
-
-
原装可开发票
LP2998MA/NOPB 中文资料属性参数
- 制造商:National Semiconductor (TI)
- 封装:Tube
- 工厂包装数量:95
产品特性
- AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): Device HBM ESD Classification Level H1C Junction Temperature Range –40°C to 125°C
- Device HBM ESD Classification Level H1C
- Junction Temperature Range –40°C to 125°C
- 1.35 V Minimum VDDQ
- Source and Sink Current
- Low Output Voltage Offset
- No External Resistors Required
- Linear Topology
- Suspend to Ram (STR) Functionality
- Low External Component Count
- Thermal Shutdown
产品概述
The LP2998 linear regulator is designed to meet JEDEC SSTL-2 and JEDEC SSTL-18
specifications for termination of DDR-SDRAM and DDR2 memory. The device also supports DDR3 and DDR3L VTT bus termination with VDDQ min
of 1.35 V. The device contains a high-speed operational amplifier to provide excellent response to
load transients. The output stage prevents shoot through while delivering 1.5 A continuous current
and transient peaks up to 3 A in the application as required for DDR-SDRAM termination. The LP2998
also incorporates a VSENSE pin to provide superior load regulation and a
VREF output as a reference for the chipset and DIMMs.An additional feature found on the LP2998 is an active low shutdown
(SD) pin that provides Suspend To RAM (STR) functionality. When
SD is pulled low the VTT output will tri-state
providing a high impedance output, but, VREF will remain active. A power
savings advantage can be obtained in this mode through lower quiescent current.
LP2998MA/NOPB 电路图
LP2998MA/NOPB 电路图
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