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- 参考价格：CNY 10.40-CNY 9.00
更新日期：2024-04-01 00:04:00
产品简介：具有高电平或低电平有效输出 4V UVLO 的 5A/3A 双通道栅极驱动器
查看详情- 参考价格：CNY 10.40-CNY 9.00
LM5111-4M 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
-
TI(德州仪器)
-
SOIC-8
2022+ -
12000
-
上海市
-
-
-
原装可开发票
LM5111-4M 中文资料属性参数
- 驱动芯片类型:：功率
- 模块配置:：低压侧
- 输出电流 峰值:：5A
- 输出阻值:：30ohm
- 输入延迟:：25ns
- 输出延时:：25ns
- 电源电压范围:：3.5V 到 14V
- 封装类型:：SOIC
- 针脚数:：8
- 工作温度范围:：-40°C 到 +125°C
- SVHC(高度关注物质):：No SVHC (19-Dec-2011)
- 封装类型:：SOIC
- 电源电压 最大:：14V
- 电源电压 最小:：3.5V
- 表面安装器件:：表面安装
- 输入/输出延迟:：25ns
- 输出电流, 最大:：3A
- 输出端吸入电流:：5A
- 输出通道数字:：2
产品特性
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5-A Sink and 3-A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)
- Available in Dual Noninverting, Dual Inverting and Combination Configurations
- Supply Rail Undervoltage Lockout Protection (UVLO)ƒ
- LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
- Pin Compatible With Industry Standard Gate Drivers
产品概述
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak
output current and efficiency. Each compound output driver stage
includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak
from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Undervoltage lockout protection is also
provided. The drivers can be operated in parallel with inputs and outputs connected to double the
drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.
LM5111-4M 电路图
LM5111-4M 电路图