- 参考价格:¥4.42-¥4.67
更新日期:2024-04-01 00:04:00

产品简介:具有高电平或低电平有效输出 4V UVLO 的 5A/3A 双通道栅极驱动器
查看详情- 参考价格:¥4.42-¥4.67
LM5111-1M 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
-
TI
-
TSSOP
23+ -
46000
-
合肥
-
-
-
科大讯飞战略投资企业,提供一站式配套服务
-
TI
-
Driver 5A 2-OUT Low Side Non-Inv 8-Pin SOIC Tube
22+ -
1425
-
上海市
-
-
-
原装,假一罚十
-
TI(德州仪器)
-
SOIC-8_150mil
2022+ -
780
-
上海市
-
-
-
原装可开发票
-
TI/德州仪器
-
SOIC8
21+ -
10000
-
杭州
-
-
-
原装正品,BOM一站式服务
-
NS
-
SOP-8
23+ -
5800
-
上海市
-
-
-
进口原装现货,杜绝假货。
-
TI
-
-
2021+ -
28000
-
苏州
-
-
-
TI/NS
-
-
21+ -
12500
-
上海市
-
-
-
原装现货,品质为先!请来电垂询!
-
NS
-
MSOP-8
22+授权代理 -
15800
-
上海市
-
-
-
旋尔只做进口原装,假一赔十...
-
TI
-
-
23+ -
8000
-
上海市
-
-
-
原厂原装假一赔十
LM5111-1M 中文资料属性参数
- 制造商:National Semiconductor (TI)
- 类型:Low Side
- 上升时间:25 ns
- 下降时间:25 ns
- Supply Voltage - Max:14 V
- Supply Voltage - Min:3.5 V
- 电源电流:2 mA
- 最大工作温度:+ 125 C
- 安装风格:SMD/SMT
- 封装 / 箱体:SOIC-8 Narrow
- 封装:Tube
- 配置:Non-Inverting
- 最小工作温度:- 40 C
- 激励器数量:2
- 输出端数量:2
- 输出电流:5 A (Typ)
- 工厂包装数量:95
产品特性
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5-A Sink and 3-A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)
- Available in Dual Noninverting, Dual Inverting and Combination Configurations
- Supply Rail Undervoltage Lockout Protection (UVLO)ƒ
- LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
- Pin Compatible With Industry Standard Gate Drivers
产品概述
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak
output current and efficiency. Each compound output driver stage
includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak
from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Undervoltage lockout protection is also
provided. The drivers can be operated in parallel with inputs and outputs connected to double the
drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.
LM5111-1M 数据手册
数据手册 | 说明 | 数量 | 操作 |
---|---|---|---|
![]() |
Dual 5A Compound Gate Driver |
10 Pages页,206K | 查看 |
![]() |
Dual 5A Compound Gate Driver |
10 Pages页,206K | 查看 |
LM5111-1M 电路图

LM5111-1M 电路图
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