您好,欢迎来到知芯网

更新日期:2024-04-01 00:04:00

暂无图片

产品简介:具有 8V UVLO 的 1A、100V 半桥栅极驱动器

查看详情
  • 参考价格:¥3.81-¥3.88

LM5109ASD 供应商

  • 公司
  • 型号
  • 品牌
  • 封装/批号
  • 数量
  • 地区
  • 日期
  • 说明
  • 询价

LM5109ASD 中文资料属性参数

  • 制造商:National Semiconductor (TI)
  • 类型:High and Low Side
  • 上升时间:15 ns (Typ)
  • 下降时间:15 ns (Typ)
  • Supply Voltage - Max:14 V
  • Supply Voltage - Min:8 V
  • 电源电流:1.8 mA (Typ)
  • 最大工作温度:+ 125 C
  • 安装风格:SMD/SMT
  • 封装 / 箱体:LLP EP
  • 封装:Reel
  • 配置:Non-Inverting
  • 最大关闭延迟时间:2 ns (Typ)
  • 最大开启延迟时间:2 ns (Typ)
  • 最小工作温度:- 40 C
  • 激励器数量:2
  • 输出端数量:2
  • 输出电流:1 A (Typ)
  • 工厂包装数量:1000

产品特性

  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1A peak Output Current (1.0A Sink / 1.0A Source)
  • Independent TTL Compatible Inputs
  • Bootstrap Supply Voltage to 108V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000 pF Load with 15ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Pin Compatible with ISL6700
  • Industry Standard SOIC-8 and Thermally Enhanced WSON-8 Package

产品概述

The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC and the thermally enhanced WSON packages.

LM5109ASD 数据手册

数据手册 说明 数量 操作
LM5109ASD/NOPB

IC DVR HALF-BRIDGE 100V 1A 8LLP

9页,658K 查看

LM5109ASD 电路图

LM5109ASD 电路图

LM5109ASD 电路图

IC 索引: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9