- 参考价格:¥10.97-¥9.80
更新日期:2024-04-01 00:04:00
LM5107SD/NOPB 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
-
TI(德州仪器)
-
WSON-8(4x4)
2022+ -
12000
-
上海市
-
-
-
原装可开发票
-
TI
-
-
2021+ -
28000
-
苏州
-
-
LM5107SD/NOPB 中文资料属性参数
- 制造商:National Semiconductor (TI)
- 类型:High and Low Side
- 上升时间:15 ns (Typ)
- 下降时间:15 ns (Typ)
- Supply Voltage - Max:14 V
- Supply Voltage - Min:8 V
- 电源电流:3.4 mA
- 最大工作温度:+ 125 C
- 安装风格:SMD/SMT
- 封装 / 箱体:LLP EP
- 封装:Reel
- 配置:Non-Inverting
- 最大关闭延迟时间:15 ns
- 最大开启延迟时间:15 ns
- 最小工作温度:- 40 C
- 激励器数量:2
- 输出端数量:2
- 输出电流:1.4 A (Typ)
- 工厂包装数量:1000
产品特性
- Drives Both a High Side and Low Side N-Channel MOSFET
- High Peak Output Current (1.4-A Sink / 1.3-A Source)
- Independent TTL Compatible Inputs
- Integrated Bootstrap Diode
- Bootstrap Supply Voltage to 118 V DC
- Fast Propagation Times (27-ns Typical)
- Drives 1000 pF Load With 15-ns Rise and Fall Times
- Excellent Propagation Delay Matching (2-ns Typical)
- Supply Rail Undervoltage Lockout
- Low Power Consumption
- Pin Compatible With ISL6700
- Packages: SOIC WSON (4 mm × 4 mm)
- SOIC
- WSON (4 mm × 4 mm)
产品概述
The LM5107 is a low cost high voltage gate driver, designed to drive both the high side
and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The
floating high-side driver is capable of working with rail voltages up to 100-V. The outputs are
independently controlled with TTL compatible input thresholds. An integrated on chip high voltage
diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter
technology operates at high speed while consuming low power and providing clean level transitions
from the control input logic to the high side gate driver. Undervoltage lockout is provided on both
the low side and the high side power rails. The device is available in the SOIC and the thermally
enhanced WSON packages.
LM5107SD/NOPB 电路图
LM5107SD/NOPB 电路图
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