LM5104SD/NOPB
电源管理 IC- 参考价格:¥13.66-¥9.18
更新日期:2024-04-01
LM5104SD/NOPB 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
-
NSC/ELNAF
-
10-LLP
1810+ -
9
-
上海市
-
-
-
原装现货,精专配套,正品BOM表报价
LM5104SD/NOPB 中文资料属性参数
- 制造商:National Semiconductor (TI)
- 类型:High and Low Side
- 上升时间:600 ns (Typ)
- 下降时间:600 ns (Typ)
- Supply Voltage - Max:14 V
- Supply Voltage - Min:9 V
- 电源电流:3 mA
- 最大工作温度:+ 125 C
- 安装风格:SMD/SMT
- 封装 / 箱体:LLP EP
- 封装:Reel
- 配置:Inverting, Non-Inverting
- 最小工作温度:- 40 C
- 激励器数量:2
- 输出端数量:2
- 输出电流:1.8 A (Typ)
- 工厂包装数量:1000
产品特性
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- Adaptive Rising and Falling Edges With Programmable Additional Delay
- Single Input Control
- Bootstrap Supply Voltage Range up to 118-V DC
- Fast Turnoff Propagation Delay (25 ns Typical)
- Drives 1000-pF Loads With 15-ns Rise and Fall Times
- Supply Rail Undervoltage Lockout
- SOIC and WSON-10 4-mm × 4-mm Package
产品概述
The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the
low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can
work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from
a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through
issues. In addition to the adaptive transition timing, an additional delay time can be added,
proportional to an external setting resistor. An integrated high-voltage diode is provided to
charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed
while consuming low power and providing clean level transitions from the control logic to the
high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side
power rails. This device is available in the standard SOIC and the WSON packages.
LM5104SD/NOPB 数据手册
数据手册 | 说明 | 数量 | 操作 |
---|---|---|---|
![]() |
IC DVR HALF-BRIDGE HV 10WSON |
23页,1000K | 查看 |
LM5104SD/NOPB 电路图

LM5104SD/NOPB 电路图
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