- 参考价格:¥11.80-¥7.94
更新日期:2024-04-01 00:04:00
产品简介:具有 8V UVLO 和可编程延迟的 2A、100V 半桥栅极驱动器
查看详情- 参考价格:¥11.80-¥7.94
LM5102SD/NOPB 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
TI
-
原厂原装
22+ -
3288
-
上海市
-
-
-
一级代理原装
LM5102SD/NOPB 中文资料属性参数
- 制造商:National Semiconductor (TI)
- 类型:High and Low Side
- 上升时间:600 ns (Typ)
- 下降时间:600 ns (Typ)
- Supply Voltage - Max:14 V
- Supply Voltage - Min:9 V
- 电源电流:3 mA
- 最大工作温度:+ 125 C
- 安装风格:SMD/SMT
- 封装 / 箱体:LLP EP
- 封装:Reel
- 配置:Non-Inverting
- 最大开启延迟时间:750 ns
- 最小工作温度:- 40 C
- 激励器数量:2
- 输出端数量:2
- 输出电流:1.8 A (Typ)
- 工厂包装数量:1000
产品特性
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- Independently Programmable High and Low Side Rising Edge Delay
- Bootstrap Supply Voltage Range up to 118 V dc
- Fast Turn-Off Propagation Delay (25 ns Typical)
- Drives 1000-pF Loads with 15-ns Rise and Fall Times
- Supply Rail Undervoltage Lockout
- Low Power Consumption
- Timer Can Be Terminated Midway Through Sequence
产品概述
The LM5102 high-voltage gate driver is designed to drive both the high side and the low
side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side
driver is capable of working with supply voltages up to 100 V. The outputs are independently
controlled. The rising edge of each output can be independently delayed with a programming
resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap
capacitor. A robust level shifter operates at high speed while consuming low power and providing
clean level transitions from control logic to the high side gate driver. Undervoltage lockout is
provided on both the low side and the high side power rails. This device is available in the
standard VSSOP 10 pin and the WSON 10 pin packages.
LM5102SD/NOPB 电路图
LM5102SD/NOPB 电路图
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