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更新日期:2024-04-01

产品简介:汽车级、双通道、30V、1MHz、低功耗运算放大器

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  • 参考价格:¥136.41

LF442AMH 供应商

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LF442AMH 中文资料属性参数

  • 制造商:National Semiconductor (TI)
  • 通道数量:2
  • 共模抑制比(最小值):80 dB
  • 输入补偿电压:1 mV at +/- 20 V
  • 安装风格:Through Hole
  • 封装 / 箱体:TO-99
  • 转换速度:1 V/us at +/- 15 V
  • 关闭:No
  • 最大工作温度:+ 125 C
  • 封装:Bulk
  • 最小工作温度:- 55 C
  • 工厂包装数量:500
  • 电源电流:0.4 mA at +/- 20 V
  • 技术:BiFET
  • 电压增益 dB:106.02 dB

产品特性

  • 1/10 Supply Current of a LM1458: 400 µA (Max)
  • Low Input Bias Current: 50 pA (Max)
  • Low Input Offset Voltage: 1 mV (Max)
  • Low Input Offset Voltage Drift: 7 µV/°C (Typ)
  • High Gain Bandwidth: 1 MHz
  • High Slew Rate: 1 V/µs
  • Low Noise Voltage for Low Power: 35 nV/√Hz
  • Low Input Noise Current: 0.01 pA/√Hz
  • High Input Impedance: 1012Ω
  • High Gain VO = ±10V, RL = 10k: 50k (Min)

产品概述

The LF442-MIL dual low power operational amplifiers provide many of the same AC characteristics as the industry standard LM1458 while greatly improving the DC characteristics of the LM1458. The amplifiers have the same bandwidth, slew rate, and gain (10 kΩ load) as the LM1458 and only draw one tenth the supply current of the LM1458. In addition the well matched high voltage JFET input devices of the LF442-MIL reduce the input bias and offset currents by a factor of 10,000 over the LM1458. A combination of careful layout design and internal trimming ensures very low input offset voltage and voltage drift. The LF442-MIL also has a very low equivalent input noise voltage for a low power amplifier.The LF442-MIL is pin compatible with the LM1458 allowing an immediate 10 times reduction in power drain in many applications. The LF442-MIL should be used where low power dissipation and good electrical characteristics are the major considerations.

LF442AMH 数据手册

数据手册 说明 数量 操作
LF442AMH

Dual Low Power JFET Input Operational Amplifier

12 Pages页,441K 查看
LF442AMH/NOPB

J-FET Amplifier 2 Circuit TO-99-8

24页,983K 查看

LF442AMH 电路图

LF442AMH 电路图

LF442AMH 电路图

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