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LF356H

Texas Instruments 放大器 IC
  • 参考价格：￥40.57-￥41.47

更新日期：2024-04-01

LF356H

Texas Instruments 放大器 IC

产品简介：军用级、单通道、30V、5MHz、FET 输入运算放大器

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  • 参考价格：￥40.57-￥41.47

LF356H 供应商

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  • 封装/批号
  • 数量
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LF356H 中文资料属性参数

  • 制造商：National Semiconductor (TI)
  • 通道数量：1
  • 共模抑制比（最小值）：80 dB
  • 输入补偿电压：10 mV at +/- 15 V
  • 安装风格：Through Hole
  • 封装 / 箱体：TO-99
  • 转换速度：12 V/us at +/- 15 V
  • 关闭：No
  • 最大工作温度：+ 70 C
  • 封装：Bulk
  • 最小工作温度：0 C
  • 工厂包装数量：500
  • 电源电流：10 mA at +/- 15 V
  • 技术：BiFET
  • 电压增益 dB：106.02 dB

产品特性

  • Advantages Replace Expensive Hybrid and Module FET Op AmpsRugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input DevicesExcellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f CornerOffset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic AmplifiersNew Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability ProblemsInternal Compensation and Large Differential Input Voltage Capability
  • Replace Expensive Hybrid and Module FET Op Amps
  • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
  • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
  • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
  • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
  • Internal Compensation and Large Differential Input Voltage Capability
  • Common Features Low Input Bias Current: 30 pALow Input Offset Current: 3 pAHigh Input Impedance: 1012 ΩLow Input Noise Current: 0.01 pA/√Hz High Common-Mode Rejection Ratio: 100 dBLarge DC Voltage Gain: 106 dB
  • Low Input Bias Current: 30 pA
  • Low Input Offset Current: 3 pA
  • High Input Impedance: 1012 Ω
  • Low Input Noise Current: 0.01 pA/√Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB
  • Uncommon Features Extremely Fast Settling Time to 0.01%: 1.5 µsFast Slew Rate: 12 V/µs Wide Gain Bandwidth: 5 MHz Low Input Noise Voltage: 12 nV/√Hz
  • Extremely Fast Settling Time to 0.01%: 1.5 µs
  • Fast Slew Rate: 12 V/µs
  • Wide Gain Bandwidth: 5 MHz
  • Low Input Noise Voltage: 12 nV/√Hz

产品概述

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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LF356H 数据手册

数据手册 说明 数量 操作
LF356H

JFET Input Operational Amplifiers

 23 Pages页,1.05M 查看
LF356H

JFET-Input Operational Amplifiers Low Supply Current High Speed

 4 Pages页,1.05M 查看
LF356H

Series Monolithic JFET Input Operational Amplifiers

 18 Pages页,1.05M 查看
LF356H

J-FET Amplifier 1 Circuit TO-99-8

 43页,2.32M 查看
LF356H/NOPB

J-FET Amplifier 1 Circuit TO-99-8

 43页,2.32M 查看

LF356H 电路图

LF356H 电路图

LF356H 电路图

LF356H 相关产品

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