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存储器热门型号
| 器件图 | 型号 | 制造商 | 封装 | 描述 | 价格 | |
|---|---|---|---|---|---|---|
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W25Q01JVTBIQ TR | - |
IC FLASH 1GBIT SPI/QUAD 24TFBGA |
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W25Q512JVFIQ TR | - |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
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W66CL2NQUAHJ TR | - |
IC DRAM 4GBIT LVSTL 11 200WFBGA |
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W66CM2NQUAFJ | - |
IC DRAM 4GBIT LVSTL 11 200WFBGA |
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W66CM2NQUAHJ TR | - |
IC DRAM 4GBIT LVSTL 11 200WFBGA |
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W958D8NBYA4I TR | - |
IC PSRAM 256MBIT HYPERBS 24TFBGA |
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W972GG6KB-18 TR | - |
IC DRAM 2GBIT PAR 84WBGA |
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W972GG8KS-18 TR | - |
IC DRAM 2GBIT PARALLEL 60WBGA |
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W972GG8KS-25 TR | - |
IC DRAM 2GBIT PARALLEL 60WBGA |
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W97AH6NBVA1I TR | - |
IC DRAM 1GBIT HSUL 12 134VFBGA |
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W9864G2JH-6 TR | - |
IC DRAM 64MBIT PAR 86TSOP II |
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AS4C128M16MD4-062BAN | - |
IC DRAM 2GBIT LVSTL 200FBGA |
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AS6C1616B-45TINTR | - |
MEMORY |
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AS6C1616B-55TINTR | - |
MEMORY |
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IS43LQ32640AL-062TBLI-TR | - |
2G, 0.57-0.65V/1.06-1.17/1.70-1. |
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IS43LR32640B-5BLI-TR | - |
2G, 1.8V, Mobile DDR, 64Mx32, 20 |
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IS43QR16256B-083RBLI-TR | - |
4G, 1.2V, DDR4, 256Mx16, 2400MT/ |
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MT29AZ5A3CHHTB-18AAT.109 TR | - |
IC FLASH RAM 4G PARALLEL |
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MT40A1G8SA-062E AIT:E | - |
IC DRAM 8GBIT PARALLEL 78FBGA |
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MT40A512M16LY-062E AIT:E | - |
IC DRAM 8GBIT PARALLEL 96FBGA |