- RoHS:
镉(Cd)/镉化合物 0.01%
六价隔(Cr6+)/六价隔化合物 0.10%
铅(Pb)/铅化合物 0.10%
汞(Hg)/汞化合物 0.10%
多溴联苯(PBB)0.10%
多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
说明:Diodes (General Purpose, Power, Switching) Switching diode 200 mW - 参考价格:¥0.131
更新日期:2025-01-08

产品简介:发光二极管(通用、电源、转换) Switching diode 200 mW
- RoHS:
镉(Cd)/镉化合物 0.01%
六价隔(Cr6+)/六价隔化合物 0.10%
铅(Pb)/铅化合物 0.10%
汞(Hg)/汞化合物 0.10%
多溴联苯(PBB)0.10%
多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
说明:Diodes (General Purpose, Power, Switching) Switching diode 200 mW - 参考价格:¥0.131
1SS355 供应商
- 公司
- 型号
- 品牌
- 封装/批号
- 数量
- 地区
- 日期
- 说明
- 询价
-
1SS355
原装现货 -
PLINGSEMIC/鹏领
-
SOD-323
24+ -
3000
-
深圳
-
01-08
-
1SS355
原装现货 -
JD
-
SOD-323FL
23/24+ -
60000
-
深圳
-
12-05
-
原厂代理,原装现货
-
1SS355
热卖 -
SEMIWELL
-
SOD-323
24+ -
500000
-
上海市
-
-
-
原装现货 特价热卖 品质保证 竭诚为您服务
-
PANJIT
-
SOD323
21+ -
10000
-
杭州
-
-
-
只做原装现货,大量现货热卖
-
ROHM
-
113
22+授权代理 -
15800
-
上海市
-
-
-
旋尔只做进口原装,假一赔十...
-
LISION
-
SOD-323
21+ -
50000
-
上海市
-
-
-
原装现货!品质为先!请来电垂询!
-
ON
-
SMB
新批号 -
887000
-
上海市
-
-
-
原厂直发进口原装微信同步QQ893727827
-
ST
-
SOD323
23+ -
58000
-
上海市
-
-
-
进口原装现货,杜绝假货。
-
ST/ELNAF
-
SOT-323
1914+ -
162000
-
上海市
-
-
-
原装现货,精专配套,正品BOM表报价
-
YANGJIE
-
SOD-323
24+ -
50000
-
上海市
-
-
-
原厂直销全新原装现货 欢迎选购
1SS355 中文资料属性参数
- 制造商:Taiwan Semiconductor
- 产品种类:发光二极管(通用、电源、转换)
1SS355 数据手册
数据手册 | 说明 | 数量 | 操作 |
---|---|---|---|
![]() |
Switching diode |
4 Pages页,62K | 查看 |
![]() |
Silicon Epitaxial Planar High-Speed Switching Diodes |
2 Pages页,62K | 查看 |
![]() |
Dated : 22/07/2012 Rev:01 TOP DYNAMIC 1SS355 Silicon Epitaxial Planar Switching Diode Features ? Small plastic package suitable for surface mounted design ? High reliability with high surge current handling capability Applications ? High speed switching Absolute Maximum Ratings (T a = 25 O C) Parameter Symbol Value Unit Peak Reverse Voltage V RM 90 V Reverse Voltage V R 80 V Average Rectified Forward Current I F(AV) 100 mA Peak Forward Current I FM 225 mA Surge Forward Current (1 s) I FSM 500 mA Junction Temperature T j 150 O C Storage Temperature Range T stg - 55 to + 150 O C Electrical Characteristics (T a = 25 O C) Parameter Symbol Max. Unit Forward Voltage at I F = 100 mA V F 1.2 V Reverse Current at V R = 80 V I R 0.1 μA Capacitance between Terminals at V R = 0.5 V, f = 1 MHz C T 3 pF Reverse Recovery Time at V R = 6 V, I F = 10 mA, R L = 100 ? t rr 4 ns Anode 2 Top View Marking C |
3页,94K | 查看 |
![]() |
3页,1K | 查看 | |
![]() |
Dated: 11/02/2014 Rev: 01 TOP DYNAMIC 1SS355-CW-HAF Silicon Epitaxial Planar Switching Diode Features ? Small plastic package suitable for surface mounted design ? High reliability with high surge current handling capability ? Halogen and Antimony Free(HAF), RoHS compliant Applications ? High speed switching Absolute Maximum Ratings (T a = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage V RM 90 V Reverse Voltage V R 80 V Average Rectified Forward Current I F(AV) 100 mA Peak Forward Current I FM 225 mA Surge Forward Current (1 s) I FSM 500 mA Junction Temperature T j 150 ℃ Storage Temperature Range T stg - 55 to + 150 ℃ Electrical Characteristics (T a = 25℃) Parameter Symbol Max. Unit Forward Voltage at I F = 100 mA V F 1.2 V Reverse Current at V R = 80 V I R 0.1 μA Capacitance between Terminals at V R = 0.5 V, f = 1 MHz C T 3 pF Reverse Recovery Time at V R = 6 V, I F = 10 mA, R L = 100 ? t rr |
3页,152K | 查看 |
![]() |
Dated : 20/07/2012 TOP DYNAMIC 1SS355-HAF Silicon Epitaxial Planar Switching Diode Features ? Small plastic package suitable for surface mounted design ? High reliability with high surge current handling capability ? Halogen and Antimony Free(HAF), RoHS compliant Applications ? High speed switching Absolute Maximum Ratings (T a = 25 O C) Parameter Symbol Value Unit Peak Reverse Voltage V RM 90 V Reverse Voltage V R 80 V Average Rectified Forward Current I F(AV) 100 mA Peak Forward Current I FM 225 mA Surge Forward Current (1 s) I FSM 500 mA Junction Temperature T j 150 O C Storage Temperature Range T stg - 55 to + 150 O C Electrical Characteristics (T a = 25 O C) Parameter Symbol Max. Unit Forward Voltage at I F = 100 mA V F 1.2 V Reverse Current at V R = 80 V I R 0.1 μA Capacitance between Terminals at V R = 0.5 V, f = 1 MHz C T 3 pF Reverse Recovery Time at V R = 6 V, I F = 10 mA, R L = 100 ? |
3页,94K | 查看 |
![]() |
DIODE, SWITCHING, 80V, SMD; Diode Type:Small Signal; Forward Current If(AV):100mA; Repetitive Reverse Voltage Vrrm Max:90V; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:225mA; Diode Case Style:SOD-323; No. of Pins:2; SVHC:No SVHC (18-Jun-2010); Alternate Case Style:SC-90/A; Current Ifsm:500mA; Diode Configuration:Single; Junction Temperature Tj Max:150°C; Package / Case:SOD-323; Termination Type:SMD; Time on for IFSM:1s |
4页,248K | 查看 |
1SS355 相关产品
- 1.5KE100A-E3/54
- 1.5KE16CA-E3/54
- 1.5KE18A-E3/54
- 1.5KE18CA-E3/54
- 1.5KE200A-E3/54
- 1.5KE220CA-E3/54
- 1.5KE24ARL4
- 1.5KE27A-E3/54
- 1.5KE30A-E3/54
- 1.5KE30CA-E3/54
- 1.5KE36CA-E3/54
- 1.5KE43A-E3/54
- 1.5KE440CA-E3/54
- 1.5KE6.8C-E3/54
- 1.5KE62A-E3/54
- 1.5SMC100A-E3/57T
- 1.5SMC200A-E3/57T
- 1.5SMC200CA-E3/57T
- 1.5SMC27CAHE3/57T
- 1.5SMC39A-E3/57T
- 1.5SMC400A-E3/57T
- 1.5SMC440A-E3/57T
- 1.5SMC540A-E3/57T
- 10A10
- 10ETS10S
- 111RKI120
- 111RKI40
- 111RKI80
- 123NQ080R
- 129NQ135R