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  • RoHS:
    • 镉(Cd)/镉化合物 0.01%
    • 六价隔(Cr6+)/六价隔化合物 0.10%
    • 铅(Pb)/铅化合物 0.10%
    • 汞(Hg)/汞化合物 0.10%
    • 多溴联苯(PBB)0.10%
    • 多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
    说明:Diodes (General Purpose, Power, Switching) Switching diode 200 mW
  • 参考价格:¥0.131

更新日期:2025-01-08

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产品简介:发光二极管(通用、电源、转换) Switching diode 200 mW

  • RoHS:
    • 镉(Cd)/镉化合物 0.01%
    • 六价隔(Cr6+)/六价隔化合物 0.10%
    • 铅(Pb)/铅化合物 0.10%
    • 汞(Hg)/汞化合物 0.10%
    • 多溴联苯(PBB)0.10%
    • 多溴联苯醚(PBDE)0.10% - 含十溴二苯醚(Deca-BDE) 0.10%
    说明:Diodes (General Purpose, Power, Switching) Switching diode 200 mW
  • 参考价格:¥0.131

1SS355 供应商

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1SS355 中文资料属性参数

  • 制造商:Taiwan Semiconductor
  • 产品种类:发光二极管(通用、电源、转换)

1SS355 数据手册

数据手册 说明 数量 操作
1SS355

Switching diode

4 Pages页,62K 查看
1SS355

Silicon Epitaxial Planar High-Speed Switching Diodes

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1SS355

Dated : 22/07/2012 Rev:01 TOP DYNAMIC 1SS355 Silicon Epitaxial Planar Switching Diode Features ? Small plastic package suitable for surface mounted design ? High reliability with high surge current handling capability Applications ? High speed switching Absolute Maximum Ratings (T a = 25 O C) Parameter Symbol Value Unit Peak Reverse Voltage V RM 90 V Reverse Voltage V R 80 V Average Rectified Forward Current I F(AV) 100 mA Peak Forward Current I FM 225 mA Surge Forward Current (1 s) I FSM 500 mA Junction Temperature T j 150 O C Storage Temperature Range T stg - 55 to + 150 O C Electrical Characteristics (T a = 25 O C) Parameter Symbol Max. Unit Forward Voltage at I F = 100 mA V F 1.2 V Reverse Current at V R = 80 V I R 0.1 μA Capacitance between Terminals at V R = 0.5 V, f = 1 MHz C T 3 pF Reverse Recovery Time at V R = 6 V, I F = 10 mA, R L = 100 ? t rr 4 ns Anode 2 Top View Marking C

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1SS355-BL-HAF

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1SS355-CW-HAF

Dated: 11/02/2014 Rev: 01 TOP DYNAMIC 1SS355-CW-HAF Silicon Epitaxial Planar Switching Diode Features ? Small plastic package suitable for surface mounted design ? High reliability with high surge current handling capability ? Halogen and Antimony Free(HAF), RoHS compliant Applications ? High speed switching Absolute Maximum Ratings (T a = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage V RM 90 V Reverse Voltage V R 80 V Average Rectified Forward Current I F(AV) 100 mA Peak Forward Current I FM 225 mA Surge Forward Current (1 s) I FSM 500 mA Junction Temperature T j 150 ℃ Storage Temperature Range T stg - 55 to + 150 ℃ Electrical Characteristics (T a = 25℃) Parameter Symbol Max. Unit Forward Voltage at I F = 100 mA V F 1.2 V Reverse Current at V R = 80 V I R 0.1 μA Capacitance between Terminals at V R = 0.5 V, f = 1 MHz C T 3 pF Reverse Recovery Time at V R = 6 V, I F = 10 mA, R L = 100 ? t rr

3页,152K 查看
1SS355-HAF

Dated : 20/07/2012 TOP DYNAMIC 1SS355-HAF Silicon Epitaxial Planar Switching Diode Features ? Small plastic package suitable for surface mounted design ? High reliability with high surge current handling capability ? Halogen and Antimony Free(HAF), RoHS compliant Applications ? High speed switching Absolute Maximum Ratings (T a = 25 O C) Parameter Symbol Value Unit Peak Reverse Voltage V RM 90 V Reverse Voltage V R 80 V Average Rectified Forward Current I F(AV) 100 mA Peak Forward Current I FM 225 mA Surge Forward Current (1 s) I FSM 500 mA Junction Temperature T j 150 O C Storage Temperature Range T stg - 55 to + 150 O C Electrical Characteristics (T a = 25 O C) Parameter Symbol Max. Unit Forward Voltage at I F = 100 mA V F 1.2 V Reverse Current at V R = 80 V I R 0.1 μA Capacitance between Terminals at V R = 0.5 V, f = 1 MHz C T 3 pF Reverse Recovery Time at V R = 6 V, I F = 10 mA, R L = 100 ?

3页,94K 查看
1SS355TE-17

DIODE, SWITCHING, 80V, SMD; Diode Type:Small Signal; Forward Current If(AV):100mA; Repetitive Reverse Voltage Vrrm Max:90V; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:225mA; Diode Case Style:SOD-323; No. of Pins:2; SVHC:No SVHC (18-Jun-2010); Alternate Case Style:SC-90/A; Current Ifsm:500mA; Diode Configuration:Single; Junction Temperature Tj Max:150°C; Package / Case:SOD-323; Termination Type:SMD; Time on for IFSM:1s

4页,248K 查看

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