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1N4448W

Taiwan Semiconductor 稳压二极管
  • 参考价格：￥0.131

更新日期：2025-01-08 11:01:05

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1N4448W

Taiwan Semiconductor 稳压二极管

产品简介：稳压二极管 Switching diode 400 mW

  • 参考价格：￥0.131

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1N4448W 中文资料属性参数

  • 制造商：Taiwan Semiconductor
  • 产品种类：稳压二极管
  • 封装：Reel
  • 工厂包装数量：3000

1N4448W 数据手册

数据手册 说明 数量 操作
1N4448W

FAST SWITCHING SURFACE MOUNT DIODE

 3 Pages页,61K 查看
1N4448W

FAST SWITCHING SURFACE MOUNT DIODE

 2 Pages页,61K 查看
1N4448W

SURFACE MOUNT FAST SWITCHING DIODE

 3 Pages页,61K 查看
1N4448W

Surface mount Small Signal Diodes

 2 Pages页,61K 查看
1N4448W

SURFACE MOUNT SWITCHING DIODES

 3 Pages页,61K 查看
1N4448W

Small Signal Diodes

 4 Pages页,61K 查看
1N4448W

1N4448W

 2页,1.49M 查看
1N4448W

Dated : 17/03/2012 Rev:01 TOP DYNAMIC 1N4448W Silicon Epitaxial Planar Switching Diode Fast Switching Diode Absolute Maximum Ratings (T a = 25 O C) Parameter Symbol Value Unit Peak Reverse Voltage V RM 100 V Reverse Voltage V R 80 V Average Rectified Forward Current I F(AV) 150 mA Forward Continuous Current I FM 300 mA Non-Repetitive Peak Forward Surge Current (at t = 1 μs) I FSM 4 A Power Dissipation P d 400 mW Junction Temperature T j 150 O C Storage Temperature Range T stg - 65 to + 150 O C Characteristics at T a = 25 O C Parameter Symbol Min. Max. Unit Forward Voltage at I F = 5 mA at I F = 10 mA at I F = 100 mA at I F = 150 mA V F 0.62 - - - 0.72 0.855 1 1.25 V Reverse Leakage Current at V R = 80 V at V R = 20 V at V R = 75 V, T J = 150 O C at V R = 25 V, T J = 150 O C I R - - - - 100 25 50 30 nA nA μA μA Reverse Breakdown Voltage at

3页,124K 查看
1N4448W-7

FAST SWITCHING SURFACE MOUNT DIODE

 3 Pages页,82K 查看
1N4448WS

SURFACE MOUNT FAST SWITCHING DIODE

 3 Pages页,41K 查看

1N4448W 相关产品

IC 索引： A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9