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Process Change Notice #1606201 ____________________________________________________________________________________________________ W7206F1 Process Change Notice Form rev AY The information contained in this document is PROPRIETARY to Silicon Laboratories, Inc. and shall not be reproduced or used in part or whole without Silicon Laboratories’ written consent. The document is uncontrolled if printed or electronically saved. Pg 4 User Registration Register today to create your account on Silabs.com. Your personalized profile allows you to receive technical document updates, new product announcements, “how-to” and design documents, product change notices (PCN) and other valuable content available only to registered users. http://www.silabs.com/profile PCN Date: 6/20/2016 Effective Date: 7/15/2016 Title: WGM110A Rev1.1 Data Sheet Update PCN Type: ? Datasheet ? Foundry ? Packing ? Product Revision ? Assembly ? Labeling ? Discontinuance ? Test ? Other Last Order

? 2004 OSA Opto Light GmbH ? Tel. +49-(0)30-65 76 26 83 ? Fax +49-(0)30-65 76 26 81 ? contact@osa-opto.com YELLOW-GREEN Item No.: 160622 1. This specification applies to GaP / GaP LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes p-side (anode) Au alloy n-side (cathode) Au alloy 3. Outlines (dimensions in microns) Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions min typ max Unit Forward voltage V F I F = 2 mA 1,95 2,20 V Reverse current I R V R = 5 V 10 μA Luminous intensity * I V I F = 2 mA 500 700 μcd Peak wavelength λ P I F = 2 mA 568 nm * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. I V typ Quantity min max p-Electrode 250 p-Epitaxy GaP n-S