160272

? 2004 OSA Opto Light GmbH ? Tel. +49-(0)30-65 76 26 83 ? Fax +49-(0)30-65 76 26 81 ? contact@osa-opto.com YELLOW-GREEN Item No.: 160272 1. This specification applies to AlInGaP / GaAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes p-side (anode) Au alloy or Al n-side (cathode) Au alloy 3. Outlines (dimensions in microns) Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions min typ max Unit Forward voltage V F I F = 20 mA 2,10 2,40 V Reverse current I R V R = 5 V 10 μA Luminous intensity * I V I F = 10 mA 26,0 mcd dom. wavelength λ D I F = 20 mA 572 nm * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. I V typ Quantity min max p-Electrode 250 Epita

? 2004 OSA Opto Light GmbH ? Tel. +49-(0)30-65 76 26 83 ? Fax +49-(0)30-65 76 26 81 ? contact@osa-opto.com YELLOW-GREEN Item No.: 160272 1. This specification applies to AlInGaP / GaAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes p-side (anode) Au alloy or Al n-side (cathode) Au alloy 3. Outlines (dimensions in microns) Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions min typ max Unit Forward voltage V F I F = 20 mA 2,10 2,40 V Reverse current I R V R = 5 V 10 μA Luminous intensity * I V I F = 10 mA 26,0 mcd dom. wavelength λ D I F = 20 mA 572 nm * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. I V typ Quantity min max p-Electrode 250 Epita